IP Library Granted Patent US 9,115,019
Granted Patent B2
US 9,115,019 · App. 13/145,094 · Granted Aug 25, 2015

Vitreous silica crucible and method of manufacturing the same

Inventors: Toshiaki Sudo (Akita, JP); Hiroshi Kishi (Akita, JP); Eriko Suzuki (Akita, JP)
Assignee: SUMCO CORPORATION
C03B19/095C03C15/00C03C17/23C03C23/007C03C23/0025C30B15/10C30B29/06C30B35/002C03C2218/345Y10T117/1032
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Quick Facts
Patent No.
US 9,115,019
App. No.
13/145,094
Granted
Aug 25, 2015
Kind
B2
Abstract

Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal which can suppress melt surface vibration of silicon melt filled therein and has a long lifetime. The crucible includes a peripheral wall portion, a curved portion and a bottom portion, and has a plurality of micro recesses on the specific region of the inner surface of the peripheral wall portion.

Claims (24)

1. A method of manufacturing a vitreous silica crucible for pulling a silicon single crystal, the crucible comprising a peripheral wall portion, a curved portion and a bottom portion and having an outer layer of a natural fused silica layer and an inner layer of a synthetic fused silica layer, the method comprising the processes of:

forming an outer layer of natural silica powder;

forming an inner layer of synthetic silica powder on an inner surface of the outer layer;

forming a vitreous silica crucible having a peripheral wall portion, a curved portion and a bottom portion by fusing the layers from an inner surface side of the inner layer by arc discharge;

forming a plurality of micro recesses in a specific region by use of physical processing using a carbon dioxide laser or diamond tool after the process of forming the vitreous silica crucible; and

removing processing strain introduced in the process of forming the micro recesses by heat-treating the vitreous silica crucible at a temperature of 1200 to 1400 deg. C. for 5 minutes to one hour;

wherein the thickness of the peripheral wall portion is in the range of 100 μm to 1000 μm;

the specific region is located in a region of 0.60 H to 0.90 H from the bottom portion, where H is a height of the vitreous silica crucible;

the specific region is divided into ring-shaped inner portions each having a width of 0.2 mm to 4.0 mm and the specific region has at least one micro recess in each of the ring-shaped inner portions;

the average diameter of the micro recesses is in the range of 10 μm to 300 μm;

the average depth of the micro recesses is in the range of 0.10% to 30% of the thickness of the crucible in the peripheral wall portion; and

the ratio of the average diameter to the average depth, of the micro recesses, is less than 0.7.

2. A method of manufacturing a vitreous silica crucible for pulling a silicon single crystal, the crucible comprising a peripheral wall portion, a curved portion and a bottom portion and having an outer layer of a natural fused silica layer and an inner layer of a synthetic fused silica layer, the method comprising the processes of:

forming an outer layer of natural silica powder;

forming an inner layer of synthetic silica powder on an inner surface of the outer layer;

forming a vitreous silica crucible having a peripheral wall portion, a curved portion and a bottom portion by fusing the layers from an inner surface side of the inner layer by arc discharge;

forming a plurality of micro recesses in a specific region by use of physical processing using a carbon dioxide laser or diamond tool after the process of forming the vitreous silica crucible; and

removing processing strain introduced in the process of forming the micro recesses by acid-treating the vitreous silica crucible one to ten times with an aqueous solution of hydrofluoric acid having a hydrogen fluoride concentration of 20% to 30%;

wherein the thickness of the peripheral wall portion is in the range of 100 μm to 1000 μm;

the specific region is located in a region of 0.60 H to 0.90 H from the bottom portion, where H is a height of the vitreous silica crucible;

the specific region is divided into ring-shaped inner portions each having a width of 0.2 mm to 4.0 mm and the specific region has at least one micro recess in each of the ring-shaped inner portions;

the average diameter of the micro recesses is in the range of 10 μm to 300 μm;

the average depth of the micro recesses is in the range of 0.10% to 30% of the thickness of the crucible in the peripheral wall portion; and

the ratio of the average diameter to the average depth, of the micro recesses, is less than 0.7.

Assignments (2)
MERGER Recorded Jul 13, 2015
From: JAPAN SUPER QUARTZ CORPORATION
To: SUMCO CORPORATION
Reel/Frame 036073/0190 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 18, 2011
From: SUDO, TOSHIAKI; KISHI, HIROSHI; SUZUKI, ERIKO
To: JAPAN SUPER QUARTZ CORPORATION
Reel/Frame 026609/0246 →
Priority Claims (3)
JP 2009-282748 · Dec 14, 2009 · national
JP 2009-282752 · Dec 14, 2009 · national
JP 2009-283302 · Dec 14, 2009 · national
Continuity (1)
Related Publication 20120255487A1 · Oct 11, 2012