Carbon layer and method of manufacture
A system and method for manufacturing a carbon layer is provided. An embodiment comprises depositing a first metal layer on a substrate, the substrate comprising carbon. A silicide is epitaxially grown on the substrate, the epitaxially growing the silicide also forming a layer of carbon over the silicide. In an embodiment the carbon layer is graphene, and may be transferred to a semiconductor substrate for further processing to form a channel within the graphene.
1. A method for manufacturing a channel material, the method comprising:
depositing a first metal layer on a substrate, the substrate comprising silicon carbon, wherein the silicon carbon has a (111) crystalline orientation;
epitaxially growing a silicide on the substrate, the epitaxially growing the silicide also forming a layer of carbon over the silicide, wherein the layer of carbon is a product from a reaction of the first metal layer and the substrate; and
curing the layer of carbon with a first anneal, wherein the curing the layer of carbon is performed after the epitaxially growing the silicide on the substrate.
2. The method of claim 1 , wherein the layer of carbon is graphene.
3. The method of claim 1 , wherein the epitaxially growing the silicide further comprises performing a second anneal.
4. The method of claim 3 , wherein the performing the second anneal is performed at least in part at a temperature of less than about 800° C.
5. The method of claim 1 , further comprising:
transferring the layer of carbon to a semiconductor substrate; and
forming a transistor from at least a portion of the layer of carbon.
6. A method of manufacturing a semiconductor device, the method comprising:
forming a first metal layer over a carbon-containing substrate, wherein the carbon-containing substrate has a (111) crystalline orientation; and
annealing the first metal layer and the carbon-containing substrate to form a first silicide region and a graphene layer from the first metal layer and the carbon-containing substrate, wherein the graphene layer is located over the first silicide region, wherein the annealing the first metal layer and the carbon-containing substrate is performed at a temperature of less than 200° C. and causes the first silicide region to be epitaxially grown.
7. The method of claim 6 , wherein the first metal layer has a thickness of less than about 10 nm.
8. The method of claim 6 , wherein the carbon-containing substrate comprises silicon carbon.
9. The method of claim 6 , further comprising:
removing the graphene layer from the first silicide region using a transfer layer; and
placing the graphene layer onto a semiconductor substrate.
10. A method of manufacturing a semiconductor device, the method comprising:
providing a substrate comprising carbon, the substrate having a first lattice constant and a (111) crystalline orientation;
depositing a first metal layer in contact with the substrate; and
forming a carbon layer over the substrate, wherein the carbon layer is graphene, the forming the carbon layer comprising growing a monocrystalline silicide on the substrate, the monocrystalline silicide having a second lattice constant the same as the first lattice constant, wherein the carbon layer comprises carbon from the substrate; and
curing the carbon layer after the forming the carbon layer, wherein the forming the carbon layer is performed at least in part using a first anneal and the curing the carbon layer is performed at least in part using a second anneal different from the first anneal, and wherein the second anneal occurs after the growing the monocrystalline silicide.
11. The method of claim 10 , wherein the first anneal further comprises annealing the substrate and the first metal layer at a temperature less than about 800° C.
12. The method of claim 10 , further comprising:
separating the carbon layer from the monocrystalline silicide;
transferring the carbon layer to a semiconductor substrate; and
forming a channel within the carbon layer.
13. The method of claim 10 , wherein the first metal layer has a thickness of less than about 10 nm.
14. The method of claim 1 , wherein, prior to the depositing the first metal layer on the substrate, the silicide is chosen such that a lattice constant of the silicide is close to a lattice constant of the substrate.
15. The method of claim 3 , wherein the performing the first anneal is performed at least in part at a temperature of less than about 200° C.
16. The method of claim 6 , wherein the carbon-containing substrate comprises silicon germanium carbon.
17. The method of claim 11 , wherein the forming the carbon layer further comprises annealing the substrate and the first metal layer at a temperature less than about 200° C.
18. The method of claim 1 , wherein the silicon carbon has a thickness between about 0.5 μm and about 500 μm.
19. The method of claim 6 , further comprising an insulator located beneath the carbon-containing substrate.
20. The method of claim 10 , wherein the first metal layer comprises platinum, cobalt, palladium, copper, or iron.