Method of manufacturing flexible substrate and method of manufacturing display device using the same
A sacrificial layer is formed on a support substrate and a flexible substrate is formed on the sacrificial layer. Pixels are then formed on the flexible substrate. The sacrificial layer is heated by microwave energy, and a gas is discharged from the sacrificial layer. The flexible substrate, including the pixels formed thereon, is separated from the support substrate including the sacrificial layer formed thereon using the gas.
1. A method of manufacturing a display device, comprising:
forming a sacrificial layer on a support substrate;
forming a flexible substrate on the sacrificial layer;
forming pixels on the flexible substrate;
heating the sacrificial layer using microwave energy to generate a gas from the sacrificial layer, and thereby weakening a bonding between the flexible substrate and the sacrificial layer; and
separating the flexible substrate from the support substrate using the gas.
2. The method of claim 1 , wherein the sacrificial layer comprises an inorganic material.
3. The method of claim 2 , wherein:
the support substrate comprises a glass substrate;
the flexible substrate comprises a polyimide substrate; and
the sacrificial layer comprises hydrogenated silicon carbide.
4. The method of claim 3 , wherein, during heating of the sacrificial layer, the sacrificial layer absorbs more microwave energy than does each of the support substrate and the flexible substrate.
5. The method of claim 3 , wherein the gas is generated by vaporizing the hydrogen contained in the sacrificial layer while the sacrificial layer is heated.
6. The method of claim 5 , wherein the sacrificial layer is heated at a temperature of about 400° C. to about 500° C.
7. The method of claim 3 , wherein the sacrificial layer is formed by a chemical vapor deposition.
8. The method of claim 7 , wherein the chemical vapor deposition is performed using a source gas comprising silane (SiH 4 ) and methane (CH 4 ).
9. The method of claim 8 , wherein a weight percent of the hydrogen in the sacrificial layer is in a range from about 1 wt % to about 50 wt %, and the weight percent of the hydrogen is controlled by controlling a concentration of the methane contained in the source gas.
10. The method of claim 1 , wherein the forming of the flexible substrate comprises:
applying a source solution comprising polyamic acid to the sacrificial layer; and
curing the source solution applied to the sacrificial layer.
11. The method of claim 1 , wherein the forming of the sacrificial layer comprises:
forming a preliminary sacrificial layer on a cell area of the support substrate and an edge area of the support substrate disposed outside the cell area; and
removing a portion of the preliminary sacrificial layer disposed on the edge area.
12. The method of claim 11 , wherein the flexible substrate is formed on the cell area and the edge area and covers the sacrificial layer.
13. The method of claim 12 , further comprising removing a portion of the flexible substrate disposed on the edge area, to expose the portion of the sacrificial layer before the sacrificial layer is heated.
14. A method of manufacturing a flexible substrate, comprising:
forming a sacrificial layer on a support substrate;
forming a flexible substrate on the sacrificial layer;
heating the sacrificial layer using microwave energy to generate a gas from the sacrificial layer; and
separating the flexible substrate from the support substrate.
15. The method of claim 14 , wherein the sacrificial layer comprises an inorganic material to absorb energy of the microwave energy.
16. The method of claim 15 , wherein:
the support substrate comprises a glass substrate;
the flexible substrate comprises a polyimide substrate; and
the sacrificial layer comprises hydrogenated silicon carbide.
17. The method of claim 16 , wherein, during heating of the sacrificial layer, the sacrificial layer absorbs more microwave energy than does each of the support substrate and the flexible substrate.
18. The method of claim 16 , wherein, during heating of the sacrificial layer, the gas is generated by vaporizing the hydrogen contained in the sacrificial layer.
19. The method of claim 16 , wherein the sacrificial layer is formed by a chemical vapor deposition using a source gas comprising silane (SiH 4 ) and methane (CH 4 ).
20. The method of claim 14 , wherein the forming of the flexible substrate comprises:
applying a source solution comprising polyamic acid to the sacrificial layer; and
curing the source solution applied to the sacrificial layer.