Semiconductor-encapsulating adhesive, semiconductor-encapsulating film-form adhesive, method for producing semiconductor device, and semiconductor device

1. A method for producing a semiconductor device equipped with a semiconductor chip having a bump and a substrate having a metal interconnect, comprising a connection step of:

(1) arranging the semiconductor chip and the substrate such that the bump and the metal interconnect face each other with a semiconductor-encapsulating adhesive interposed therebetween, the semiconductor-encapsulating adhesive comprising

(a) an epoxy resin, and

(b) a compound formed of an organic acid reactive with an epoxy resin and a curing accelerator, wherein the compound is formed prior to use in the semiconductor-encapsulating adhesive; and

(2) heating the semiconductor chip and the substrate while pressing the semiconductor chip and the substrate in the facing direction thereof, to cure the semiconductor-encapsulating adhesive and to electrically connect the bump and the metal interconnect.

2. The method of claim 1 , wherein the semiconductor-encapsulating adhesive comprises (c) a polymeric component having a weight-average molecular weight of 10,000 or more.

3. The method of claim 1 , wherein (a) the epoxy resin is solid at 1 atm and at 25° C.

4. The method of claim 1 , wherein (b) the compound formed of an organic acid reactive with an epoxy resin and a curing accelerator is solid at 1 atm and at 25° C.

5. The method of claim 1 , wherein (b) the compound formed of an organic acid reactive with an epoxy resin and a curing accelerator has a melting point of 120° C. or higher.

6. The method of claim 1 , wherein (b) the compound formed of an organic acid reactive with an epoxy resin and a curing accelerator has an actively reacted range of 120° C. or higher.

7. The method of claim 1 , wherein the organic acid is an acid having a carboxyl group.

8. The method of claim 1 , wherein the curing accelerator is an imidazole.

9. The method of claim 1 , wherein the organic acid is trimesic acid.

10. The method of claim 1 , wherein the semiconductor-encapsulating adhesive has a melt viscosity of 250 Pa·s or lower at 350° C. or higher, and a void generation rate of 5% or less when the semiconductor-encapsulating adhesive is compression bonded at 350° C. for 5 seconds or more.

11. The method of claim 1 , wherein the semiconductor-encapsulating adhesive is a film-form adhesive.