Package for light-emitting device
The present invention provides a package for a light-emitting device, including the light-emitting device configured to provide light having a specific wavelength region, electrode pads formed on the light-emitting device, and a phosphor layer formed over the light-emitting device other than regions where the electrode pads are formed and configured to convert the light of the light-emitting device into white light by changing the wavelength of the light provided by the light-emitting device, wherein the phosphor layer is formed in a conformable thickness and is formed in a region wider than an upper region of the light-emitting device other than the regions where the electrode pads are formed.
1. A package for a light-emitting device, comprising:
the light-emitting device configured to provide light having a specific wavelength region;
electrode pads formed on the light-emitting device; and
a phosphor layer formed over the light-emitting device other than regions where the electrode pads are formed, such that the electrode pads remain exposed, and configured to convert the light of the light-emitting device into white light by changing the wavelength of the light provided by the light-emitting device, the phosphor layer being formed over only an upper region of the light-emitting device,
wherein the phosphor layer is formed in a conformable thickness that is substantially uniform and is formed in a region wider than an upper region of the light-emitting device such that an outer edge of the phosphor layer extends outward beyond an outer edge of the light-emitting device other than in the regions where the electrode pads are formed, and
wherein:
the phosphor layer is made of a mixture of phosphor, a silicon, and a hardner, and
hardness of the phosphor layer is controlled by changing an addition ratio (wt %) of the hardner;
wherein a ratio of the phosphor to silicon is substantially 1:1.
2. The package of claim 1 , wherein the phosphor layer has hardness (Durometer Shore D) of 25 to 75.
3. The package of claim 1 , further comprising a heat-blocking layer having a uniform thickness and configured to suppress a transfer of heat from the light-emitting device to the phosphor layer between the light-emitting device and the phosphor layer.
4. The package of claim 1 , wherein the hardener comprises SiO2.
5. The package of claim 1 , wherein an amount of the hardener is approximately 0.5%-3.5% by weight.
6. The package of claim 1 , wherein the outer edge of the phosphor layer extends outward beyond the outer edge of the light-emitting device is in a range from 10 μm to 1000 μm.
7. The package of claim 3 , wherein the heat-blocking layer is made of transparent silicon.
8. The package of claim 4 , wherein the hardener has a diameter of approximately 1 micrometer or less.