Semiconductor device with buried bit line

1. A semiconductor device comprising:

an isolation region having a first depth;

a semiconductor region surrounded by the isolation region;

a groove in the semiconductor region;

an insulating film in the groove;

a buried bit line extending along the groove, the buried bit line being terminated by the isolation region and being an impurity diffusion region of the semiconductor region;

a plurality of pillars in the semiconductor region, the plurality of pillars being aligned along the groove;

a gate electrode disposed on a side surface of each of the pillars, and along only a portion of a peripheral edge of each of the pillars in plan view; and

a gate insulating film provided on a side surface and a bottom surface of the gate electrode,

wherein the groove extends deeper than the buried bit line, and

wherein the groove crosses a boundary of the isolation region and the semiconductor region.

2. The semiconductor device according to claim 1 , wherein the groove extends in a first direction.

3. The semiconductor device according to claim 2 , wherein the gate insulating film is disposed on a side surface and a bottom surface of a trench, and the trench extends in a second direction that is perpendicular to the first direction.

4. The semiconductor device according to claim 1 , wherein the buried bit line includes first and second buried bit lines, the groove being disposed between the first and second buried bit lines, the ends of each of the first and second buried bit lines reaching the isolation region.

5. The semiconductor device according to claim 1 further comprising:

a transistor in each of the plurality of pillars, a part of the buried bit line functioning as one of source and drain of the transistor.

6. The semiconductor device according to claim 2 , wherein the buried bit line located in a side surface of the groove.

7. A semiconductor device comprising:

an isolation region having a first depth;

a semiconductor region surrounded by the isolation region;

first and second grooves in the semiconductor region, the first and second grooves extending in parallel to each other;

insulating films in the first and second grooves;

a buried bit line extending along the first groove, the buried bit line being terminated by the isolation region and being an impurity diffusion region of the semiconductor region;

a plurality of pillars in the semiconductor region, the plurality of pillars being aligned along one of the first and second grooves;

a gate electrode disposed on a side surface of each of the pillars, and along only a portion of a peripheral edge of the each of the pillars in plan view; and

a gate insulating film provided on a side surface and a bottom surface of the gate electrode,

wherein the first groove extends deeper than the buried bit line, and

wherein the first and second grooves cross a boundary of the isolation region and the semiconductor region.

8. The semiconductor device according to claim 7 , further comprising:

a transistor in each of the plurality of pillars, a part of the buried bit line functioning as one of source and drain of the transistor.

9. The semiconductor device according to claim 7 , wherein

the gate insulating film is disposed on a side surface and a bottom surface of a trench, and

the trench extends in a direction that is perpendicular to the extending direction of the first and second grooves.

10. The semiconductor device according to claim 7 , wherein the buried bit line located in a side surface of at least one of the first and second grooves.

11. A semiconductor device comprising:

a semiconductor substrate including an isolation region, the isolation region having a first depth;

an insulating film on a surface region of the semiconductor substrate, the insulating film surrounding a semiconductor region of the semiconductor substrate;

first and second grooves in the semiconductor region, the first and second grooves extending in a first direction, the first and second grooves being disposed adjacent to each other;

insulators in the first and second grooves;

a buried bit line in the semiconductor region, the buried bit line extending in the first direction, the buried bit line being an impurity diffusion region of the semiconductor region, in contact with the insulators, and terminated by the insulating film;

a plurality of pillars in the semiconductor region, the plurality of pillars being aligned along one of the first and second grooves;

a gate electrode disposed on a side surface of each of the pillars, and along only a portion of a peripheral edge of the each of the pillars in plan view; and

a gate insulating film provided on a side surface and a bottom surface of the gate electrode,

wherein the first groove extends deeper than the buried bit line, and

wherein the first and second grooves cross a boundary of the insulating film and the semiconductor region.

12. The semiconductor device according to claim 11 , wherein bottom surfaces of the first and second of grooves are higher in level than a bottom surface of the isolation region.

13. The semiconductor device according to claim 11 , further comprising:

a transistor in each of the plurality of pillars, a part of the buried bit line functioning as one of source and drain of the transistor.

14. The semiconductor device according to claim 13 , further comprising:

a capacitor electrically coupled to the transistor, the capacitor being disposed over the transistor.

15. The semiconductor device according to claim 11 , wherein

the gate insulating film is disposed on a side surface and a bottom surface of a trench, and the trench extends in a second direction that is perpendicular to the first direction.

16. The semiconductor device according to claim 11 , wherein the buried bit line located in a side surface of at least one of the first and second grooves.