Strained source and drain (SSD) structure and method for forming the same
Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a gate stack structure formed on the substrate. The semiconductor device structure also includes gate spacers formed on sidewalls of the gate stacks. The semiconductor device structure includes doped regions formed in the substrate. The semiconductor device structure also includes a strained source and drain (SSD) structure adjacent to the gate spacers, and the doped regions are adjacent to the SSD structure. The semiconductor device structure includes SSD structure has a tip which is closest to the doped region, and the tip is substantially aligned with an inner side of gate spacers.
1. A semiconductor device structure, comprising:
a substrate;
a gate stack structure formed on the substrate;
gate spacers formed on sidewalls of the gate stack structure; and
doped regions formed in the substrate;
a source and drain (SSD) structure adjacent to the gate spacers, wherein the doped regions are adjacent to the SSD structure, and SSD structure has a tip which is closest to the doped region, and the tip is substantially aligned with an inner side of gate spacers, wherein the doped regions have a gradient dopant concentration, and dopant concentration is decreased from inner side to outer side of doped regions.
2. The semiconductor device structure as claimed in claim 1 , wherein an inner border of the SSD structure on a top surface of substrate is not aligned with an outer side of the gate spacers.
3. The semiconductor device structure as claimed in claim 1 , wherein the doped regions are doped with arsenic (As), phosphorous (P), antimony (Sb), boron (B) or boron fluorine (BF 2 ).
4. The semiconductor device structure as claimed in claim 1 , wherein the doped regions have a depth in a range from about 1A to about 100A.
5. The semiconductor device structure as claimed in claim 1 , wherein the doped regions have a doping concentration in a range from about 1E13 to about 2E18 atom/cm 2 .
6. The semiconductor device structure as claimed in claim 1 , wherein a surface proximity is defined by a distance on the substrate between the inner side of the gate spacers and an inner border of the SSD structure, and the surface proximity is in a range from about −1 nm to about +1 nm.
7. The semiconductor device structure as claimed in claim 1 , wherein the SSD structure has a depth which is below a top surface of the substrate in a range from about 37 nm to about 43 nm.
8. The semiconductor device structure as claimed in claim 1 , wherein the SSD structure has a raised height which is above a top surface of the substrate in a range from about 16 nm to about 20 nm.
9. The semiconductor device structure as claimed in claim 1 , wherein the SSD structure comprises a silicon germanium (SiGe) SSD structure.
10. The semiconductor device structure as claimed in claim 1 , wherein the SSD structure is defined by a first facet and a second facet of the substrate in a first direction and a third facet of the substrate in a second direction.
11. The semiconductor device structure as claimed in claim 10 , wherein a tip depth between the top surface of the substrate and an intersection of the first facet and the second facet is in a range from about 5 nm to about 8 nm.
12. A semiconductor device structure, comprising:
a substrate having a top surface;
a gate stack structure formed on the substrate;
sealing layers formed on sidewalls of the gate stack structure;
gate spacers formed on the sealing layers;
a doped region formed in the substrate below the gate spacers; and
an SiGe SSD structure formed in the substrate adjacent to gate spacers and the doped region, wherein a surface proximity is defined by a distance on the top surface of the substrate between an inner side of the gate spacers and an inner border of the SiGe SSD structure, and the surface proximity is in a range from about −1 nm to about +1 nm, wherein the doped regions have a gradient dopant concentration, and dopant concentration is decreased from inner side to outer side of doped regions.
13. The semiconductor device structure as claimed in claim 12 , wherein the doped regions are doped with arsenic (As), phosphorous (P), antimony (Sb), boron (B) or boron fluorine (BF 2 ).
14. The semiconductor device structure as claimed in claim 12 , wherein the doped regions have a doping concentration in a range from about 1E13 to about 2E18 atom/cm 2 .
15. The semiconductor device structure as claimed in claim 12 , wherein the SiGe SSD structure has a raised height which is above the top surface of the substrate in a range from about 16 nm to about 20 nm.
16. The semiconductor device structure as claimed in claim 12 , wherein the SiGe SSD structure is defined by a first facet and a second facet of the substrate in a first direction and a third facet of the substrate in a second direction.
17. The semiconductor device structure as claimed in claim 16 , wherein a tip depth between the top surface of the substrate and an intersection of the first facet and the second facet is in a range from about 5 nm to about 8 nm.
18. The semiconductor device structure as claimed in claim 12 , wherein an inner border of the SiGe SSD structure on a top surface of substrate is not aligned with an outer side of the gate spacers.
19. The semiconductor device structure as claimed in claim 12 , wherein the SiGe SSD structure has a depth which is below a top surface of the substrate in a range from about 37 nm to about 43 nm.
20. The semiconductor device structure as claimed in claim 12 , wherein SiGe SSD structure has a tip which is closest to the doped region, and the tip is substantially aligned with an inner side of gate spacers.