Extremely thin package
Techniques for achieving extremely thin package structures are disclosed. In some embodiments, a device comprises an integrated circuit connected to a leadframe or substrate via connections and EMC (Epoxy Molding Compound) surrounding the integrated circuit except at a backside of the integrated circuit and connecting areas via which the integrated circuit is connected to the leadframe or substrate.
1. A device, comprising:
an integrated circuit connected to a leadframe or substrate via connections;
EMC (Epoxy Molding Compound) surrounding the integrated circuit except at a backside of the integrated circuit and connecting areas via which the integrated circuit is connected to the leadframe or substrate; and
an adhesion film applied to a top-side of the device to protect the backside of the integrated circuit that is exposed.
2. The device of claim 1 , wherein during device assembly EMC between the backside of the integrated circuit and top-side of the device is removed.
3. The device of claim 1 , wherein during device assembly grinding is used to remove EMC from a top-side of the device and expose the backside of the integrated circuit.
4. The device of claim 3 , wherein grinding includes subjecting the leadframe or substrate to top-side grinding until the backside of the integrated circuit is exposed.
5. The device of claim 3 , wherein grinding includes subjecting the leadframe or substrate to top-side grinding until a desired package thickness is achieved.
6. The device of claim 1 , wherein the backside of the integrated circuit comprises exposed silicon.
7. The device of claim 3 , wherein grinding includes subjecting the leadframe or substrate to top-side grinding until a desired integrated circuit thickness is achieved.
8. The device of claim 1 , wherein the adhesion film is cured for improved adhesion to underlying EMC and the integrated circuit backside.
9. The device of claim 1 , wherein the device comprises an extremely thin DFN (dual flat no-lead) or QFN (quad flat no-lead) package.
10. The device of claim 1 , wherein the adhesion film protects the integrated circuit from light emission induced leakage and moisture penetration.
11. A method, comprising:
molding a device comprising an integrated circuit connected to a leadframe or substrate with EMC (Epoxy Molding Compound); and
grinding EMC on the device top-side to reduce device thickness.
12. The method of claim 11 , wherein grinding EMC on the device top-side includes grinding until a backside of the integrated circuit is exposed.
13. The method of claim 11 , wherein grinding EMC on the device top-side includes grinding a backside of the integrated circuit.
14. The method of claim 11 , wherein grinding EMC on the device top-side includes grinding the integrated circuit backside to achieve a prescribed integrate circuit thickness.
15. The method of claim 11 , wherein grinding EMC on the device top-side includes removing EMC between the backside of the integrated circuit and top-side of the device.
16. The method of claim 11 , further comprising applying an adhesion film to the device top-side to protect the integrated circuit.
17. The method of claim 16 , wherein the adhesion film protects an exposed backside of the integrated circuit.
18. The method of claim 16 , further comprising curing the adhesion film for improved adhesion to underlying EMC and the integrated circuit backside.
19. The method of claim 11 , wherein the device comprises an extremely thin DFN (dual flat no-lead) or QFN (quad flat no-lead) package.
20. The method of claim 11 , wherein the device comprises an exposed silicon extremely thin DFN (dual flat no-lead) or QFN (quad flat no-lead) package.