IP Library Granted Patent US 9,150,416
Granted Patent B2
US 9,150,416 · App. 13/976,339 · Granted Oct 6, 2015

Method of forming high-quality hexagonal boron nitride nanosheet using multi component eutectic point system

Inventors: Seok-Woo Jeon (Daejeon, KR); Soon-Hyung Hong (Daejoen, KR); Dong-Ju Lee (Daejeon, KR); Kwang-Hyun Park (Jeollanam-Do, KR)
Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
C01B21/0648C01P2002/82C01P2002/88C01P2004/04C01P2004/24
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Quick Facts
Patent No.
US 9,150,416
App. No.
13/976,339
Granted
Oct 6, 2015
Kind
B2
Abstract

Provided is a method of manufacturing a hexagonal boron nitride nanosheet to mass-produce a high-quality hexagonal boron nitride nanosheet at a low temperature in a safe process. The method of manufacturing a hexagonal boron nitride nanosheet includes (a) obtaining an alkali metal ion or alkali earth metal ion from a salt mixture including at least two kinds of alkali metal salt or alkali earth metal salt, (b) preparing a hexagonal boron nitride interlayer compound by inserting the alkali metal ion or alkali earth metal ion into layers of hexagonal boron nitride, and (c) obtaining a hexagonal boron nitride nanosheet by removing the alkali metal ion or alkali earth metal ion from the hexagonal boron nitride interlayer compound.

Claims (13)

1. A method of manufacturing a hexagonal boron nitride nanosheet, comprising:

(a) obtaining an alkali metal ion or alkaline earth metal ion from a salt mixture including at least two kinds of alkali metal salt or alkaline earth metal salt,

wherein the salt mixture is melted at a temperature of 245° C. or less;

(b) preparing a hexagonal boron nitride interlayer compound by inserting the alkali metal ion or alkaline earth metal ion into layers of hexagonal boron nitride; and

(c) obtaining a hexagonal boron nitride nanosheet by removing the alkali metal ion or alkaline earth metal ion from the hexagonal boron nitride interlayer compound.

2. The method according to claim 1 , wherein the operations (a) and (b) includes:

(i) preparing a hexagonal boron nitride-salt mixture by mixing the salt mixture and hexagonal boron nitride;

(ii) melting the salt mixture by heating the hexagonal boron nitride-salt mixture at a eutectic point of the salt mixture or more; and

(iii) preparing a hexagonal boron nitride interlayer compound by inserting an alkali metal ion or alkali alkaline earth metal ion generated by melting the salt mixture between layers of hexagonal boron nitride to increase a gap between the layers of hexagonal boron nitride and separate the layers of hexagonal boron nitride.

3. The method according to claim 2 , wherein the alkali metal salt or alkaline earth metal salt is metal halide.

4. The method according to claim 2 , wherein the salts constituting the salt mixture are mixed in a eutectic mole fraction.

5. The method according to claim 1 , wherein the alkali metal salt or alkaline earth metal salt is metal halide.

6. The method according to claim 1 , wherein the salts constituting the salt mixture are mixed in a eutectic mole fraction.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 26, 2013
From: JEON, SEOK-WOO; HONG, SOON-HYUNG; LEE, DONG-JU; PARK, KWANG-HYUN
To: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
Reel/Frame 030693/0233 →
Priority Claims (1)
KR 10-2011-0016037 · Feb 23, 2011 · national
Continuity (1)
Related Publication 20130323150A1 · Dec 5, 2013