Semiconductor device and manufacturing method thereof
A semiconductor device includes a die, a conductive post disposed adjacent to the die, and a molding surrounding the conductive post and the die, the molding includes a protruded portion protruded from a sidewall of the conductive post and disposed on a top surface of the conductive post. Further, a method of manufacturing a semiconductor device includes disposing a die, disposing a conductive post adjacent to the die, disposing a molding over the conductive post and the die, removing some portions of the molding from a top of the molding, and forming a recess of the molding above a top surface of the conductive post.
1. A semiconductor device, comprising:
a die;
a conductive post disposed adjacent to the die; and
a molding surrounding the conductive post and the die, wherein the molding includes a protruded portion protruded from a sidewall of the conductive post, disposed on a top surface of the conductive post, and surrounding a portion of a redistribution layer (RDL) electrically coupled with the conductive post.
2. The semiconductor device of claim 1 , wherein a top surface of the molding is at a level substantially higher than the top surface of the conductive post.
3. The semiconductor device of claim 1 , wherein the protruded portion of the molding includes a recessed portion extending from a top surface of the molding towards the top surface of the conductive post.
4. The semiconductor device of claim 1 , wherein an angle in the conductive post and between the top surface of the conductive post and the sidewall of the conductive post is about 30 degrees to about 130 degrees.
5. The semiconductor device of claim 1 , wherein the protruded portion of the molding is in a stepped configuration.
6. The semiconductor device of claim 1 , wherein the molding has a height of about 50 um to about 500 um.
7. The semiconductor device of claim 1 , wherein the top surface of the conductive post is in a convex shape towards a top surface of the molding or in a concaved shape towards a bottom surface of the conductive post.
8. The semiconductor device of claim 1 , wherein the protruded portion of the molding is protruded about 10 um to about 50 um from the sidewall of the conductive post.
9. The semiconductor device of claim 1 , wherein the conductive post is in a circular or an elliptical shape.
10. A semiconductor device, comprising:
a die;
a first conductive post disposed on a pad of the die;
a first redistribution layer (RDL) disposed on the first conductive post and including a first extended portion coupled with a top surface of the first conductive post;
a second conductive post disposed adjacent to the die;
a molding including a recessed portion and surrounding the second conductive post and the die; and
a second redistribution layer (RDL) including a second extended portion coupled with a top surface of the second conductive post and surrounded by the recessed portion of the molding,
wherein a width of the second conductive post is substantially greater than a width of the second extended portion of the second RDL.
11. A semiconductor device of claim 10 , wherein a height of the second extended portion of the second RDL is substantially greater than a height of the first extended portion of the first RDL.
12. A semiconductor device of claim 10 , wherein the recessed portion of the molding surrounds a portion of a polymer.
13. A semiconductor device of claim 12 , wherein the portion of the polymer surrounds the first extended portion of the first RDL or the second extended portion of the second RDL.
14. A method of manufacturing a semiconductor device, comprising:
disposing a die;
disposing a conductive post adjacent to the die;
disposing a molding over the conductive post and the die;
removing some portions of the molding from a top of the molding;
forming a recess of the molding above a top surface of the conductive post,
disposing a conductive material within the recess of the molding to form a redistribution layer (RDL).
15. The method of claim 14 , wherein the recess has a width smaller than a width of the conductive post.
16. The method of claim 14 , wherein the recess of the molding is formed by laser drilling.
17. The method of claim 14 , wherein some portions of the molding is removed by grinding.
18. The method of claim 14 , wherein further comprising disposing a polymeric material within the recess.