Thin film transistor, method for manufacturing same, and display device
According to one embodiment, a thin film transistor includes a substrate, a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, a source electrode, and a drain electrode. The gate electrode is provided on a part of the substrate. The first insulating film covers the gate electrode. The oxide semiconductor film is provided on the gate electrode via the first insulating film. The second insulating film is provided on a part of the oxide semiconductor film. The source and drain electrodes are respectively connected to first and second portions of the oxide semiconductor film not covered with the second insulating film. The oxide semiconductor film includes an oxide semiconductor. Concentrations of hydrogen contained in the first and second insulating films are not less than 5×10 20 atm/cm 3 , and not more than 10 19 atm/cm 3 , respectively.
1. A thin film transistor comprising:
a substrate;
a gate electrode provided on a part of the substrate;
a first insulating film covering the gate electrode;
an oxide semiconductor film provided on the gate electrode via the first insulating film;
a second insulating film provided on a part of the oxide semiconductor film; and
a source electrode and a drain electrode, the source electrode being connected to a first portion of the oxide semiconductor film, the first portion being not covered with the second insulating film, the drain electrode being connected to a second portion of the oxide semiconductor film, the second portion being not covered with the second insulating film,
the oxide semiconductor film including an oxide semiconductor including at least one element of In, Ga, and Zn, and
a concentration of hydrogen contained in the first insulating film being not less than 5×10 20 atm/cm 3 , and a concentration of hydrogen contained in the second insulating film being not more than 10 19 atm/cm 3 so that a current voltage characteristic of the thin film transistor remains substantially unchanged depending on a width of the oxide semiconductor film parallel to an upper surface of the substrate.
2. The transistor according to claim 1 , wherein the oxide semiconductor film is indium gallium zinc oxide.
3. The transistor according to claim 1 , wherein when viewed in a direction toward the first insulating film from the gate electrode, at least a part of the gate electrode is disposed between the source electrode and the drain electrode.
4. The transistor according to claim 1 , wherein the first insulating film includes silicon dioxide, silicon oxynitride or silicon nitride.
5. The transistor according to claim 1 , wherein acid resistance of the second insulating film is higher than acid resistance of the oxide semiconductor film.
6. The transistor according to claim 1 , wherein the second insulating film includes a silicon oxide film.
7. The transistor according to claim 1 , wherein a thickness of the oxide semiconductor film is not less than 5 nanometers and not more than 50 nanometers.