Resistive random access memory

1. A resistive random access memory, comprising:

a first electrode;

a second electrode opposite to the first electrode; and

a first metal oxide composite layer disposed between the first electrode and the second electrode, wherein the first metal oxide composite layer has a film layer and a nanorod structure.

2. The resistive random access memory of claim 1 , wherein the nanorod structure comprises a plurality of nanorods, and the longitudinal axis of at least one of the nanorods is substantially perpendicular to the film layer.

3. The resistive random access memory of claim 1 , wherein at least part of the nanorod structure is disposed between the second electrode and the film layer.

4. The resistive random access memory of claim 1 , wherein the material of the film layer and the nanorod structure comprises ZnO, NiO, TiO 2 , CuO X , WO X , FeO X , HfO 2 , TaO X or SrTiO X .

5. The resistive random access memory of claim 1 , wherein the film layer and the nanorod structure are made of the same material or different materials.

6. The resistive random access memory of claim 1 , wherein the film layer has a first thickness ranged between 25 nm and 200 nm.

7. The resistive random access memory of claim 1 , wherein the nanorod structure has a second thickness ranged between 50 nm and 500 nm.

8. The resistive random access memory of claim 1 , wherein the film layer is disposed on the first electrode by sputtering.

9. The resistive random access memory of claim 1 , wherein the nanorod structure is disposed on the film layer by chemical bath deposition or hydrothermal method.

10. The resistive random access memory of claim 1 , wherein the material of the first electrode and the second electrode comprises Pt, Pd, Os, Ir, Rh, Ru, Ti, Cu, Al, Ni, Au, Ag, or their combinations.