IP Library › Granted Patent US 9,164,835
Granted Patent B2
US 9,164,835 · App. 13/801,297 · Granted Oct 20, 2015

Operating method of controller controlling nonvolatile memory device and mapping pattern selecting method of selecting mapping pattern mapping polar coded code word with multi bit data of nonvolatile memory device

Inventors: Kijun Lee (Seoul, KR); Dong-Min Shin (Pohang-si, KR); Kyeongcheol Yang (Pohang-si, KR); Seung-Chan Lim (Pohang-si, KR); Junjin Kong (Yongin-si, KR); Myungkyu Lee (Hwaseong-si, KR)
Assignees: SAMSUNG ELECTRONICS CO., LTD.; POSTECH ACADEMY-INDUSTRY FOUNDATION
G06F11/1068G06F11/1072G11C7/1006G11C29/56004G11C29/56008H03M13/13G11C11/5628G11C16/0483G11C2211/5641
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Quick Facts
Patent No.
US 9,164,835
App. No.
13/801,297
Granted
Oct 20, 2015
Kind
B2
Abstract

An operating method of a nonvolatile memory device controller includes generating a code word through polar encoding of information bits, reading a mapping pattern, generating a repeated mapping pattern through iteration of the mapping pattern, and mapping each bit of the code word onto a specific bit of multi-bit data of the nonvolatile memory device, based upon the repeated mapping pattern.

Claims (21)

1. An operating method of a memory controller configured to control a nonvolatile memory device, the operating method comprising:

generating by the memory controller a code word through polar encoding of information bits from an external device;

reading by the memory controller a mapping pattern stored within the memory controller;

generating by the memory controller a repeated mapping pattern through iteration of the mapping pattern; and

mapping by the memory controller each bit of the code word onto a specific bit of multi-bit data of multi-bit cells of the nonvolatile memory device, based upon the repeated mapping pattern.

2. The operating method of claim 1 , wherein a length of the repeated mapping pattern is equal to a length of the code word.

3. The operating method of claim 1 , wherein mapping each bit of the code word onto a specific bit of multi-bit data of the nonvolatile memory device comprises mapping each bit of the code word onto a least significant bit or a most significant bit according to the repeated mapping pattern.

4. The operating method of claim 1 , wherein mapping each bit of the code word onto a specific bit of multi-bit data of the nonvolatile memory device comprises mapping each bit of the code word onto a least significant bit, a central significant bit, or a most significant bit according to the repeated mapping pattern.

5. The operating method of claim 1 , further comprising transferring by the memory controller a mapped code word as multi-bit write data to the nonvolatile memory device.

6. The operating method of claim 5 , further comprising:

receiving by the memory controller multi-bit read data from the nonvolatile memory device;

convening by the memory controller the multi-bit read data into a read code word based upon the repeated mapping pattern; and

decoding by the memory controller the read code word.

7. The operating method of claim 1 , further comprising:

performing by the memory controller error correction encoding on a mapped code word; and

transferring by the memory controller an encoded code word as multi-bit write data to the nonvolatile memory device.

8. The operating method of claim 7 , further comprising:

receiving by the memory controller multi-bit read data from the nonvolatile memory device;

performing by the memory controller error correction decoding on the multi-bit read data;

converting by the memory controller decoded multi-bit read data into a read code word based upon the repeated mapping pattern; and

decoding by the memory controller the read code word.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 13, 2013
From: LEE, KIJUN; SHIN, DONG-MIN; YANG, KYEONGCHEOL; LIM, SEUNG-CHAN; KONG, JUNJIN; LEE, MYUNGKYU
To: SAMSUNG ELECTRONICS CO., LTD.; POSTECH ACADEMY-INDUSTRY FOUNDATION
Reel/Frame 029989/0001 →
Priority Claims (1)
KR 10-2012-0040909 · Apr 19, 2012 · national
Continuity (1)
Related Publication 20130283128A1 · Oct 24, 2013