Implantation of gaseous chemicals into cavities formed in intermediate dielectrics layers for subsequent thermal diffusion release
The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the landing velocity on switching by introducing gas into the cavity surrounding the switching element of the MEMS device. The gas is introduced using ion implantation into a cavity close to the cavity housing the switching element and connected to that cavity by a channel through which the gas can flow from one cavity to the other. The implantation energy is chosen to implant many of the atoms close to the inside roof and floor of the cavity so that on annealing those atoms diffuse into the cavity. The gas provides gas damping which reduces the kinetic energy of the switching MEMS device which then should have a longer lifetime.
1. A method of MEMs fabrication, comprising:
fabricating a MEMs device, the MEMs device having a cavity sealed by an encapsulating layer;
implanting atoms into one of more of the encapsulating layer and another layer bordering the cavity; and
annealing the MEMs device to release the atoms into the cavity and pressurize the cavity.
2. The method of claim 1 , wherein the cavity comprises a first cavity and a second cavity that is connected to the first cavity via a channel.
3. The method of claim 2 , further comprising forming a mask over the encapsulating layer.
4. The method of claim 3 , wherein the implanting comprises implanting atoms into the encapsulating layer in an area bounding the second cavity.
5. The method of claim 4 , wherein the atoms are selected from the group consisting of nitrogen, helium, argon, xenon, and combinations thereof.
6. The method of claim 5 , wherein fabricating a MEMS device comprises:
depositing sacrificial material over an insulating layer;
forming a switching element in the sacrificial material;
depositing sacrificial material over the switching element; and
removing the sacrificial material formed over the insulating layer and the switching element.
7. The method of claim 6 , wherein the sacrificial material defines boundaries of the first cavity, the second cavity and the channel.
8. The method of claim 7 , wherein following removing the sacrificial material, the switching element is movable within the first cavity between a position in contact with the insulating layer and a position spaced from the insulating layer.
9. The method of claim 1 , wherein the implanting comprises implanting atoms into the encapsulating layer in an area bounding the cavity.
10. The method of claim 9 , wherein the atoms are selected from the group consisting of nitrogen, helium, argon, xenon, and combinations thereof.
11. The method of claim 10 , wherein fabricating a MEMS device comprises:
depositing sacrificial material over an insulating layer;
forming a switching element in the sacrificial material;
depositing sacrificial material over the switching element; and
removing the sacrificial material formed over the insulating layer and the switching element.
12. The method of claim 11 , wherein the sacrificial material defines boundaries of the cavity.
13. The method of claim 12 , wherein following removing the sacrificial material, the switching element is movable within the cavity between a position in contact with the insulating layer and a position spaced from the insulating layer.
14. The method of claim 1 , wherein fabricating a MEMS device comprises:
depositing sacrificial material over an insulating layer;
forming a switching element in the sacrificial material;
depositing sacrificial material over the switching element; and
removing the sacrificial material formed over the insulating layer and the switching element.
15. The method of claim 14 , wherein the sacrificial material defines boundaries of the cavity.
16. The method of claim 15 , wherein following removing the sacrificial material, the switching element is movable within the cavity between a position in contact with the insulating layer and a position spaced from the insulating layer.