Method of manufacturing semiconductor device
The method of manufacturing a semiconductor device in accordance with the present invention provides a metal-containing film capable of adjusting a work function. The including: (a) alternately supplying a first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and at least one selected from the group consisting of a ligand of a methyl group, a ligand of an ethyl group and a ligand of a cyclopenta-based group onto a substrate in a process chamber to form a composite metal-containing film on the substrate; and (b) alternately supplying a third source containing a third metal element and a fourth source containing nitrogen onto the substrate in the process chamber to form a metal nitride film on the composite metal-containing film.
1. A method of manufacturing a semiconductor device, comprising:
(a) alternately supplying a first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and at least one selected from the group consisting of a ligand of a methyl group, a ligand of an ethyl group and a ligand of a cyclopenta-based group onto a substrate in a process chamber to form a composite metal-containing film on the substrate; and
(b) alternately supplying a third source containing a third metal element and a fourth source containing nitrogen onto the substrate in the process chamber to form a metal nitride film on the composite metal-containing film.
2. The method of claim 1 , wherein the composite metal-containing film comprises a composite metal nitride film.
3. The method of claim 1 , wherein the composite metal-containing film comprises a composite metal carbide film.
4. The method of claim 1 , wherein the first metal element comprises one element selected from the group consisting of titanium, tungsten, tantalum, zirconium, hafnium, ruthenium, nickel and cobalt.
5. The method of claim 1 , wherein the third metal element comprises one element selected from the group consisting of titanium, tungsten, tantalum, zirconium, hafnium, ruthenium, nickel and cobalt.
6. The method of claim 1 , wherein the first metal element is same as the third metal element.
7. The method of claim 1 , further comprising:
(c) supplying a reducing gas onto the substrate before performing the step (b).
8. The method of claim 7 , wherein (c) comprises exciting the reducing gas.
9. The method of claim 1 , wherein the metal-containing film is formed on the substrate having a high-k dielectric film formed on a surface thereof.
10. The method of claim 1 , wherein the composite metal-containing film has a thickness of 5 nm or less and the metal nitride film has a thickness of 1 nm or more.
11. The method of claim 1 , further comprising:
(d) retaining a time gap between (a) and (b) using an inert gas.
12. A substrate processing apparatus comprising:
a process chamber configured to accommodate a substrate;
a source supply system configured to supply a first source containing a first metal element and a halogen element, a second source containing a second metal element different from the fist metal element and at least one selected from the group consisting of a ligand of a methyl group, a ligand of an ethyl group and a ligand of a cyclopenta-based group, a third source containing a third metal element and a fourth source containing nitrogen onto the substrate; and
a control unit configure to control the source supply system to perform: alternately supplying the first source and the second source onto the substrate in the process chamber to form a composite metal-containing film on the substrate; and alternately supplying the third source and the fourth source onto the substrate to form a metal nitride film on the composite metal-containing film.
13. A non-transitory computer-readable recording medium storing a program for causing a computer to perform:
(a) alternately supplying a first source containing a first metal element and a halogen element and a second source containing a second metal element different from the first metal element and at least one selected from the group consisting of a ligand of a methyl group, a ligand of an ethyl group and a ligand of a cyclopenta-based group onto a substrate in a process chamber to form a composite metal-containing film on the substrate; and
(b) alternately supplying a third source containing a third metal element and a fourth source containing nitrogen onto the substrate in the process chamber to form a metal nitride film on the composite metal-containing film.