Image sensor and method for fabricating the same
An age sensor including a transfer gate formed on a substrate, a photoelectric conversion region formed on a side of the transfer gate, a floating diffusion region with a trench formed on another side of the transfer gate, a barrier layer which covers a bottom of the trench and a conducting layer, which is gap-filled in the trench.
1. An image sensor, comprising:
a transfer gate formed on a front-side of a substrate;
a photoelectric conversion region formed on a side of the transfer gate;
a floating diffusion region including a trench formed on another side of the transfer gate, a barrier layer, which covers a bottom of the trench, and a conducting layer, which is gap-filled in the trench.
2. The image sensor of claim 1 , wherein the barrier layer covers the bottom plane of the trench and a portion or all of the side plane of the trench.
3. The image sensor of claim 1 , wherein the barrier layer includes an insulation layer, which absorbs or reflects light.
4. The image sensor of claim 3 , wherein the barrier layer includes a single insulation layer or a stacked layer having a plurality of insulation layers with different refractive indexes.
5. The image sensor of claim 3 , wherein the barrier layer includes a stacked layer having a first insulation layer and a second insulation layer with different refractive indexes that are alternately stacked.
6. The image sensor of claim 1 , wherein the conducting layer and the substrate are comprised of the same material.
7. The image sensor of claim 1 , wherein the conducting layer includes a first region of a first conductive type and a second region of a second conductive type, which are vertically overlapped, and wherein the first conductive type and the second conductive type are complementary.
8. The image sensor of claim 7 , wherein the first region and the second region are electrically coupled to the substrate.
9. The image sensor of claim 1 , further comprising:
a color filter formed on a back-side of the substrate; and
a micro lens formed on the color filter.
10. An image sensor, comprising:
a transfer gate fanned on a front-side of a substrate;
a photoelectric conversion region formed on a side of the transfer gate;
a floating diffusion region including a trench, which is formed on the other side of the transfer gate, a barrier layer, which covers a bottom of the trench, and a conducting layer, which is gap-filled in the trench; and
a trap region formed under the trench.
11. The image sensor of claim 10 , wherein the trap region is electrically separated from the conducting layer by the barrier layer.
12. The image sensor of claim 10 , wherein a ground voltage is provided to the trap region.
13. The image sensor of claim 10 , wherein the barrier layer substantially covers a bottom plane of the trench and a portion of a side of the trench.
14. The image sensor of claim 10 , wherein the barrier layer includes an insulation layer suitable for absorbing or reflecting light.
15. The image sensor of claim 10 , wherein the conducting layer and the substrate are comprised of a same material.
16. The image sensor of claim 10 , wherein the conducting layer includes a first region of a first conductive type and a second region of a second conductive type, which are vertically overlapped with each other, and wherein the first conductive type and the second conductive type are complementary.
17. The image sensor of claim 16 , wherein the first region and the second region are electrically coupled to the substrate.
18. The image sensor of claim 10 , further comprising:
a color filter formed on a back-side of the substrate; and
a micro lens formed on the color filter.
19. An image sensor, comprising:
a floating diffusion region with a barrier layer suitable for preventing the generation of unwanted charges in the floating diffusion layer,
wherein the barrier layer covers a bottom plane of a trench formed on a side of a transfer gate and a portion or all of a side plane of the trench.