Method for manufacturing P-type MOSFET
Provided is a method for manufacturing a p-type MOSFET, including: forming a part of the MOSFET on a semiconductor substrate including source/drain regions, a replacement gate, and a gate spacer; removing the replacement gate stack of the MOSFET to form a gate opening; forming an interface oxide layer on the exposed surface of the semiconductor substrate; forming a high-K gate dielectric layer on the interface oxide layer; forming a first metal gate layer; implanting dopant ions into the first metal gate layer; and performing annealing to cause the dopant ions to diffuse and accumulate at an upper interface between the high K gate dielectric layer and the first metal gate layer and a lower interface between the high-K gate dielectric layer and the interface oxide layer, and also to generate electric dipoles by interfacial reaction at the lower interface between the high-K gate dielectric layer and the interface oxide layer.
1. A method for manufacturing a P-type MOSFET, the method comprising:
forming a part of the MOSFET on a semiconductor substrate, the part of the MOSFET comprising source/drain regions in the semiconductor substrate, a replacement gate stack between the source/drain regions above the semiconductor substrate, and a gate spacer surrounding the replacement gate stack;
removing the replacement gate stack of the MOSFET to form a gate opening exposing a surface of the semiconductor substrate;
forming an interface oxide layer on the exposed surface of the semiconductor substrate;
forming a high-K gate dielectric layer on the interface oxide layer in the gate opening;
forming a first metal gate layer on the high-K gate dielectric layer;
implanting dopant ions into the first metal gate layer;
forming a second metal gate layer on the first metal gate layer to fill the gate opening; and
performing annealing to cause the dopant ions to diffuse and accumulate at an upper interface between the high-K gate dielectric layer and the first metal gate layer and a lower interface between the high-K gate dielectric layer and the interface oxide layer, and also to generate electric dipoles by interfacial reaction at the lower interface between the high-K gate dielectric layer and the interface oxide layer.
2. The method according to claim 1 , wherein the high-K gate dielectric layer comprise any one selected from ZrO 2 , ZrON, ZrSiON, HfZrO, HfZrON, HfON, HfO 2 , HfAlO, HfAlON, HfSiO, HfSiON, HfLaO, HfLaON, and any combination thereof.
3. The method according to claim 1 , wherein the high-K gate dielectric layer has a thickness of about 1.5 nm-5 nm.
4. The method according to claim 1 , wherein the high-K gate dielectric layer is formed by any one of atom layer deposition, physical vapor deposition, and metal organic chemical vapor deposition.
5. The method according to claim 4 , further comprising performing additional annealing after forming the high-K gate dielectric layer to improve quality of the high-K gate dielectric layer.
6. The method according to claim 1 , wherein the first metal gate layer comprises any one selected from TiN, TaN, MoN, WN, TaC, TaCN, and any combination thereof.
7. The method according to claim 1 , wherein the first metal gate layer has a thickness of about 2 nm-10 nm.
8. The method according to claim 1 , wherein the second metal gate layer comprises any one selected from W, Ti, TiAl, Al, Mo, Ta, TiN, TaN, WN, and any combination thereof.
9. The method according to claim 1 , wherein in implanting the dopant ions into the first metal gate layer, energy and dosage of ion implantation is controlled according to a desired threshold voltage to cause the dopant ions to distribute only in the first metal gate layer.
10. The method according to claim 9 , wherein the energy of the ion implantation is about 0.2 KeV-30 KeV.
11. The method according to claim 9 , wherein the dosage of the ion implantation is about 1E13 cm −2 -1E15 cm −2 .
12. The method according to claim 1 , wherein dopant ions implanted into the first metal gate layer is capable of increasing effective work function.
13. The method according to claim 12 , wherein the dopant is any one selected from In, B, BF 2 , Ru, W, Mo, Al, Ga, and Pt.
14. The method according to claim 1 , wherein the annealing is performed in inert gas environment or weak reduction gas environment at about 350° C.-450° C. for about 20-90 minutes.