Apparatus and method for removing defect
An apparatus for removing a defect according to the embodiment includes an image processing part for observing a surface of a substrate; a layer forming part for forming a layer on the surface of the substrate; and a humidity controlling part for controlling humidity in a chamber in which the substrate is placed. A method for removing a defect according to the embodiment includes detecting the defect on a surface of a substrate; forming an oxide layer by oxidizing the defect; and removing the oxide layer. A method for removing a defect according to another embodiment includes forming an oxide layer on an entire surface of a substrate; and removing the oxide layer to remove the defect.
1. An apparatus for removing a defect, the apparatus comprising:
an image processing part for observing a surface of a silicon-carbide substrate;
a layer forming part for forming a layer on the surface of the silicon-carbide substrate; and
a humidity controlling part for controlling humidity in a chamber in which the silicon-carbide substrate is placed;
wherein the image processing part comprises a lens and an image sensor including a charge-coupled device (CCD),
wherein the layer forming part includes a voltage applying part for applying a voltage to the silicon-carbide substrate,
wherein the voltage applying part comprises:
a probe part on the silicon-carbide substrate; and
a power supplying part for applying the voltage to the probe and the silicon-carbide substrate;
wherein the probe part includes an atomic force microscope (AFM).
2. The apparatus of claim 1 , wherein the layer forming part forms the layer on a part of the surface.
3. The apparatus of claim 1 , wherein a protrusion is formed on the surface of the silicon-carbide substrate and the layer forming part forms the layer on the protrusion.
4. The apparatus of claim 3 , wherein the protrusion includes the defect.
5. The apparatus of claim 1 , wherein the voltage applying part generates the voltage between the surface of the silicon-carbide substrate and the protrusion.
6. A method for removing a defect, the method comprising:
detecting the defect on a surface of a silicon-carbide substrate;
forming an oxide layer by oxidizing the defect; and
removing the oxide layer;
wherein the detecting the defect comprises sensing with an image sensor including a charge-coupled device (CCD);
wherein a probe part is placed on the defect, and the forming of the oxide layer comprises applying a voltage between the silicon-carbide substrate and the probe part;
wherein the probe part includes an atomic force microscope (AFM); and
wherein the forming of the oxide layer comprises maintaining humidity in a range of 40% to 90%.
7. The method of claim 6 , wherein the voltage is in a range of 2 V to 25 V.
8. The method of claim 6 , wherein the voltage is in a range of 6 V to 14 V.
9. The method of claim 6 , wherein the removing of the oxide layer comprises dipping the silicon-carbide substrate in an HF solution.
10. A method for removing a defect, the method comprising:
forming an oxide layer on an entire surface of a silicon-carbide substrate; and
removing the oxide layer to remove the defect;
wherein a thickness of the oxide layer is in a range of 0.05 um to 1 um,
wherein the forming of the oxide layer includes plasma oxidizing, and
wherein the plasma oxidizing includes applying a voltage in a range of 500 V to 1000 V.
11. The method of claim 10 , wherein the removing of the defect includes etching the oxide layer.