Infrared light sensor chip with high measurement accuracy and method for producing the infrared light sensor chip

1. Infrared light sensor chip comprising:

a substrate;

an infrared light sensor, which has a base electrode in direct contact with one side of the substrate and via which the infrared light sensor is attached to the substrate; and

a resistance thermometer, which has a resistance path that is in direct contact with the side of the substrate adjacent to the infrared light sensor and that is arranged to measure the temperature of the substrate via the resistance thermometer;

wherein the resistance path and the base electrode are composed of a same material.

2. Infrared light sensor chip, as claimed in claim 1 , wherein the material of the base electrode is platinum.

3. Infrared light sensor chip, as claimed in claim 1 , wherein the resistance path and the base electrode are equally thick.

4. Infrared light sensor chip, as claimed in claim 1 , wherein the resistance path is configured in a meandering shape.

5. Infrared light sensor chip, as claimed in claim 1 , wherein the resistance thermometer has a respective resistance electrode at each longitudinal end of the resistance path, for electronically tapping off a current electrical resistance of the resistance path.

6. Infrared light sensor chip, as claimed in claim 1 , wherein the substrate comprises a frame and a membrane that is defined by the frame, wherein the infrared light sensor is disposed with its base electrode on the membrane, and the resistance thermometer is disposed with its resistance path on the frame.

7. Infrared light sensor chip, as claimed in claim 6 , wherein the frame is configured wider at a first location, at which the resistance thermometer is disposed, than at locations of the frame other than the first location.

8. Infrared light sensor chip, as claimed in claim 1 , wherein the infrared light sensor comprises a sensor element disposed on the base electrode and electrically conductively connected to the base electrode.

9. Infrared light sensor chip, as claimed in claim 8 , wherein the sensor element consists essentially of lead zirconate titanate.

10. Infrared light sensor chip, as claimed in claim 1 , wherein the infrared light sensor chip a thin film light sensor chip.

11. Infrared light sensor chip, as claimed in claim 1 , wherein the resistance path has at least one of:

a thickness of 40 to 100 nm, a width of 5 to 10 μm, and an electrical resistance of 1 kχ at room temperature.

12. Method for producing an infrared light sensor chip, as claimed in claim 1 , said method comprising:

providing the substrate;

coating the substrate on the side with the base electrode material, so that the side is covered by a layer of the base electrode material;

removing excess material of the base electrode material layer, so that the base electrode and the resistance path are formed on the side of the substrate; and

completing production of the infrared light sensor.

13. Method, as claimed in claim 12 , further comprising: coating the substrate by vapor depositing the base electrode material on the substrate.

14. Method, as claimed in claim 12 , further comprising:

coating the base electrode layer with the sensor element material.

15. Method, as claimed in claim 14 , further comprising: coating the base electrode layer by applying, the sensor element material to the base electrode layer with a sputtering process.