Nano-capacitor arrays for energy storage using native aluminum oxide layers and other ultra-thin dielectrics
View Patent ↗Methods and apparatus for storing information or energy. An array of nano-capacitors is provided, where each nano-capacitor has a cathodic electrode and an anode separated by a dielectric. The thickness of the intervening solid dielectric is in the range between 0.1 nanometers and 1000 nanometers and is shorter than an electron mean free path within the dielectric. The cathodic electrode is at least 100 times larger than the thickness of the intervening dielectric in every direction transverse to the thickness of the intervening dielectric. An excess of electrons is stored on the cathodic electrode. The dielectric may be a metal oxide, particularly a native oxide of the cathode material.
1. A method for storing energy, the method comprising:
a. providing an array of nanocapacitor cells, each capacitor cell including (1) a cathodic electrode; and
(2) an anode spaced apart from the cathodic electrode by an intervening dielectric characterized by a thickness normal to the cathodic electrode and by an electron mean free path,
wherein a thickness of the intervening dielectric is in the range between 0.1 nanometers and 1000 nanometers and is smaller than the electron mean free path within the dielectric, and wherein the cathodic electrode is at least 100 times larger than the thickness of the intervening dielectric in every direction transverse to the thickness dimension of the intervening dielectric; and
b. storing an excess of electrons on the cathodic electrode.
2. A method in accordance with claim 1 , wherein the intervening dielectric is a solid.
3. A capacitor comprising a plurality of nanocapacitor cells, each capacitor cell comprising:
a. a first cathodic electrode; and
b. an anode electrode spaced apart from the first cathodic electrode by an intervening dielectric, the intervening solid dielectric characterized by a thickness normal to the first cathodic electrode and by an electron mean free path;
wherein the thickness of the intervening dielectric is in the range between 0.1 nanometers and 1000 nanometers and is shorter than the electron mean free path within the intervening dielectric, and wherein the first cathodic electrode is at least 100 times larger than the thickness of the intervening dielectric in every direction transverse to the thickness dimension of the intervening dielectric.
4. The capacitor in accordance with claim 3 , wherein the intervening dielectric is a solid.
5. The capacitor in accordance with claim 3 , wherein the intervening dielectric has a dielectric strength exceeding 1 volt per nanometer.
6. The capacitor in accordance with claim 4 , wherein the solid dielectric includes a metal oxide.
7. The capacitor in accordance with claim 6 , wherein the solid dielectric includes a native oxide of a metal comprising the cathodic electrode.
8. The capacitor in accordance with claim 6 , wherein the solid dielectric includes aluminum oxide.
9. The capacitor in accordance with claim 6 , wherein the solid dielectric includes silicon dioxide.
10. The capacitor in accordance with claim 3 , wherein each nanocapacitor is at a temperature lower than 273° K.
11. The capacitor in accordance with claim 10 , wherein each nanocapacitor is cooled by local convection of particles.