Method for manufacturing a conducting contact on a conducting element
The invention relates to a method for producing an interconnection pad on a conducting element comprising an upper face and a side wall; the method being executed from a substrate at least the upper face of which is insulating; the conducting element going through at least an insulating portion of the substrate, the method being characterized in that it comprises the sequence of the following steps: a step of embossing the conducting element, a step of forming, above the upper insulating face of the substrate, a stack of layers comprising at least one electrically conducting layer and one electrically resistive layer, a step of partially removing the electrically resistive layer, a step of electrolytic growth on the portion of the electrically conducting layer so as to form at least one interconnection pad on said conducting element.
1. A method for producing at least one interconnection pad on a conducting element comprising an upper face and a side wall, the method being executed from a substrate at least an upper face of which is electrically insulating, the conducting element extending through a portion of the substrate, the method comprising the sequence of the following steps:
a step of embossing the conducting element, so configured as to form a protrusion of the conducting element that protrudes beyond the upper face of the substrate;
a step of forming, above the upper face of the substrate, a stack of layers comprising successively at least one electrically conducting layer and one electrically resistive layer, with said electrically resistive layer having a higher resistivity than that of the electrically conducting layer;
a step of partially removing the electrically resistive layer, so configured as to expose at least a top portion of the at least one electrically conducting layer, said portion being positioned above the protrusion of the conducting element, said step comprising polishing said electrically resistive layer, while preserving said electrically resistive layer around the exposed top portion of the at least one electrically conducting layer; and
a step of electrolytic growth from said exposed top portion of the at least one electrically conducting layer, said exposed top portion being configured to seed said electrolytic growth, so as to form said at least one interconnection pad on said conducting element.
2. The method according to claim 1 , wherein the substrate is selected among an insulating substrate or a substrate comprising a dielectric layer on the surface.
3. The method according to claim 1 , wherein the step of embossing the conducting element comprises an etching, so configured as to remove a thickness of a portion of the substrate corresponding to a height h of the protrusion of the conducting element.
4. The method according to claim 1 , wherein the step of forming the stack of layers is so configured that the thickness of the electrically resistive layer is smaller than the height h of the protrusion of the conducting element.
5. The method according to claim 4 , wherein the step of forming the stack of layers is so configured that the thickness of said stack of layers is higher than the height h of the protrusion of the conducting element.
6. The method according to claim 5 , wherein the step of partially removing the electrically resistive layer is self-limited by a detection of an increase in a resisting torque.
7. The method according to claim 1 , comprising a step of complete removal of the electrically resistive layer, upon completion of the step of electrolytic growth.
8. The method according to claim 7 , wherein the step of complete removal of the electrically resistive layer comprises an etching.
9. The method according to claim 7 , comprising a step of removing the electrically conducting layer, upon completion of the step of complete removal of the electrically resistive layer.
10. The method according to claim 9 , wherein the step of removing the electrically conducting layer comprises an etching.
11. The method according to claim 9 , wherein the stack of layers further comprises a bonding layer, with said bonding layer being formed on the upper face of the substrate prior to the step of forming the electrically conducting layer, and further comprising a step of removing the bonding layer upon completion of the step of removing the electrically conducting layer.
12. The method according to claim 11 , wherein the step of removing the bonding layer comprises an etching.
13. The method according to claim 1 , wherein the stack of layers further comprises a bonding layer, with said bonding layer being formed on the upper face of the substrate prior to the step of forming the electrically conducting layer.
14. The method according to claim 1 , wherein the conducting element is surrounded by at least one layer among a diffusion barrier layer and an insulating layer, with the step of embossing the conducting element being so configured as to preserve said at least one layer among the diffusion barrier layer and the insulating layer in the protrusion of the conducting element.
15. A device comprising at least one interconnection pad obtained with the method according to claim 1 .