High electron mobility transistors having improved reliability
High electron mobility transistors (HEMTs) having improved I-V characteristics and reliability are provided. According to one embodiment, a selective implantation is performed to form a damage region in a gate-to-drain region of, for example, an IηAΓN/GaN HEMT. The selective implantation can be performed by irradiating some or all of a gate-to-drain region of an InAlN/GaN HEMT on a substrate with protons or other ions such as Ge ions, He ions, N ions, or O ions. The damage region can extend in a region below a 2DEG interface of the HEMT.
1. A high electron mobility transistor (HEMT), comprising:
a heterostructure for an HEMT on a substrate;
a gate electrode on a gate region of the heterostructure;
a source contact on a source region of the heterostructure;
a drain contact on a drain region of the heterostructure; and
a damage region extending laterally between a portion or all of an area from the gate region to the drain region of the heterostructure, the damage region extending vertically to the substrate,
wherein the heterostructure for the HEMT comprises an InAlN/GaN heterostructure,
wherein the damage region comprises protons selectively irradiated into it from the gate region to the drain region of the heterostructure to a depth below a 2DEG channel of the heterostructure,
wherein the protons are selectively irradiated by selective proton irradiation performed either: a) at an energy in a range of 5 MeV to 15 MeV and a dose in a range of 1×10 11 cm −2 to 5×10 15 cm −2 ; or b) at an energy in a range of 300 keV to 400 keV and a dose in a range of 10 9 cm −2 to 5×10 15 cm −2 , and
wherein the damage region comprises Ge ions selectively implanted into the portion or all of the area from the gate region to the drain region of the heterostructure.
2. A method of improving reliability of a high electron mobility transistor (HEMT), the method comprising:
forming source/drain contacts respectively on a source region and a drain region of a heterostructure for an HEMT on a substrate;
forming a gate electrode on a gate region of the barrier layer/buffer layer heterostructure; and
forming a damage region extending laterally between a portion or all of an area from the gate region to the drain region of the heterostructure, the damage region extending vertically to the substrate,
wherein the heterostructure for the HEMT comprises an InAlN/GaN heterostructure,
wherein forming the damage region comprises performing a selective proton irradiation to irradiate the portion or the all of the area from the gate region to the drain region of the heterostructure to a depth below a 2DEG channel of the heterostructure,
wherein the selective proton irradiation is performed either: a) at an energy in a range of 5 MeV to 15 MeV and a dose in a range of 10 11 cm −2 to 5×10 15 cm −2 ; or b) at an energy in a range of 300 keV to 400 keV and a dose in a range of 1×10 9 cm −2 to 5×10 15 cm −2 , and
wherein the damage region comprises Ge ions selectively implanted into the portion or all of the area from the gate region to the drain region of the heterostructure.
3. The method of claim 2 , wherein performing the selective proton irradiation comprises:
forming a masking layer on the substrate, exposing the portion or the all of the area from the gate region to the drain region of the heterostructure; and
irradiating the substrate having the masking layer with protons.
4. The method of claim 2 , wherein forming the damage region extending laterally between the portion or the all of the area from the gate region to the drain region of the heterostructure, the damage region extending vertically to the substrate, comprises:
performing a selective ion implantation to damage the portion or the all of the area from the gate region to the drain region of the heterostructure.
5. The method of claim 4 , wherein performing the selective ion implantation to damage the portion or the all of the area from the gate region to the drain region of the heterostructure comprises:
forming a masking layer on the substrate, exposing the portion or the all of the area from the gate region to the drain region of the heterostructure; and
implanting the Ge ions into the substrate having the masking layer.
6. The method of claim 4 , wherein the selective ion implantation is performed using Ge, He, N, or O ions.
7. The method of claim 2 , wherein the damage region is formed before forming the gate electrode.
8. The method of claim 2 , wherein the damage region is formed after forming the source/drain contacts.