Electrode structure and light emitting diode using the same
View Patent ↗An electrode structure includes a first diffusion barrier layer, an aluminum reflective layer formed over the first diffusion barrier layer. The aluminum reflective layer has a thickness from about 500 angstroms (Å) to less than 2,000 Å, a second diffusion barrier layer formed over the aluminum reflective layer, and an electrode layer overlying the second diffusion barrier layer. The electrode structure is applicable in a light emitting diode device.
1. An electrode structure disposed on a semiconductor, comprising:
a first diffusion barrier layer disposed on the semiconductor;
an aluminum reflective layer formed over the first diffusion barrier layer, wherein a thickness of the aluminum reflective layer is in a range from about 500 to less than about 2,000 angstroms;
a second diffusion barrier layer formed over the aluminum reflective layer;
an electrode layer overlying the second diffusion barrier layer; and
a solder ball disposed on the electrode layer.
2. The electrode structure of claim 1 , wherein the electrode layer is made of a material comprising silver.
3. The electrode structure of claim 1 , wherein a material of the electrode layer is selected from a group consisting of gold, silver, titanium, nickel, and a combination thereof.
4. The electrode structure of claim 1 , wherein a material of the diffusion barrier layer is made of a material comprising chromium.
5. The electrode structure of claim 1 , wherein a material of the diffusion barrier layer is selected from a group consisting of chromium, platinum, palladium, nickel, rhodium, copper, tungsten, molybdenum, and a combination thereof.
6. The electrode structure of claim 1 , further comprising a solder ball formed over the electrode layer.
7. The electrode structure of claim 1 , wherein the electrode structure is used in a light emitting diode, solar energy cell or secondary battery.
8. A light emitting diode, comprising:
a light emitting structure layer;
a first diffusion barrier layer formed over the light emitting structure layer;
an aluminum reflective layer formed over the first diffusion barrier layer, wherein a thickness of the aluminum reflective layer is in a range from about 500 to less than about 2,000 angstroms;
a second diffusion barrier layer formed over the aluminum reflective layer; and
an electrode layer overlying the second diffusion barrier layer.
9. The light emitting diode of claim 8 , wherein the electrode layer is made of a material selected from a group consisting of chromium, platinum, palladium, nickel, rhodium, copper, tungsten, molybdenum, and a combination thereof.
10. The light emitting diode of claim 8 , wherein a material of the diffusion barrier layer is selected from a group consisting of chromium, platinum, palladium, nickel, rhodium, copper, tungsten, molybdenum, and a combination thereof.