Manufacturing of high capacity prismatic lithium-ion alloy anodes
High capacity energy storage devices and energy storage device components, and more specifically, to a system and method for fabricating such high capacity energy storage devices and storage device components using processes that form three-dimensional porous structures are provided. In one embodiment, an anode structure for use in a high capacity energy storage device, comprising a conductive collector substrate, a three-dimensional copper-tin-iron porous conductive matrix formed on one or more surfaces of the conductive collector substrate, comprising a plurality of meso-porous structures formed over the conductive current collector, and an anodically active material deposited over the three-dimensional copper-tin-iron porous conductive matrix is provided. In certain embodiments, the three-dimensional copper-tin-iron porous conductive matrix further comprises a plurality of columnar projections formed on the conductive current collector with the plurality of meso-porous structure formed on the plurality of columnar projections.
1. A method of forming a porous three-dimensional electrode microstructure, comprising:
positioning a conductive substrate in a plating solution;
forming a three-dimensional copper-tin-iron porous conductive matrix on one or more surfaces of the conductive substrate using an electroplating process, comprising:
depositing a columnar metal layer over the conductive substrate at a first current density by a diffusion limited deposition process; and
depositing porous conductive dendritic structures over the columnar metal layer at a second current density greater than the first current density; and
depositing an anodically active material over the three-dimensional copper-tin-iron porous conductive matrix, wherein the plating solution comprises a tin source, a copper source, and an iron source.
2. The method of claim 1 , further comprising:
compressing the anodically active material into the three-dimensional copper-tin-iron porous conductive matrix.
3. The method of claim 2 , wherein compressing the anodically active material further comprises heating the three-dimensional copper-tin-iron porous conductive matrix and anodically active material to a temperature from about 100° C. to about 250° C.
4. The method of claim 2 , wherein the plating solution comprises copper sulfate (CuSO 4 ), stannous sulfate, and iron chloride.
5. The method of claim 2 , wherein compressing the anodically active material reduces the porosity of the anode structure from an initial porosity of from about 40% to about 50% to a final porosity of from about 20% to about 30%.
6. The method of claim 1 , wherein the first current density is between about 0.05 A/cm 2 to about 3.0 A/cm 2 and the second current density is between about 0.3 A/cm 2 to about 3 A/cm 2 .
7. The method of claim 1 , wherein the anodically active material is deposited using at least one of: chemical vapor deposition (CVD) techniques, hydraulic spray techniques, atomizing spray techniques, electrostatic spray techniques, plasma spray techniques, and thermal or flame spray techniques.
8. The method of claim 1 , wherein the anodically active material comprises particles selected from the group consisting of: graphite, graphene hard carbon, carbon black, carbon coated silicon, silicon carbide, amorphous silicon, crystalline silicon, silicon alloys, p-doped silicon, composites thereof and combinations thereof.
9. The method of claim 1 , wherein the anode structure has a porosity of between about 20% to about 30% compared to a solid film formed from the same material.
10. The method of claim 1 , wherein the plurality of columnar projections comprise a macro-porous structure that has a plurality of macroscopic pores between about 5 and about 200 microns in size and the porous conductive dendritic structures have a plurality of meso-pores that are between about 10 nanometers and about 1,000 nanometers in size.
11. The method of claim 1 , wherein the anodically active material comprises at least one of: silicon and graphite.
12. The method of claim 1 , wherein the three-dimensional copper-tin-iron porous conductive matrix further comprises lithium.
13. The method of claim 1 , wherein the conductive substrate is a flexible conductive substrate comprising copper.
14. The method of claim 1 , further comprising: depositing a tin layer over the three-dimensional copper-tin-iron porous conductive matrix prior to depositing an anodically active material over the three-dimensional copper-tin-iron porous conductive matrix.
15. A method of forming a porous three-dimensional electrode microstructure, comprising:
positioning a conductive substrate in a plating solution;
forming a three-dimensional copper-tin-iron porous conductive matrix on one or more surfaces of the conductive substrate using an electroplating process, comprising:
depositing a columnar metal layer over the conductive substrate at a first current density by a diffusion limited deposition process; and
depositing porous conductive dendritic structures over the columnar metal layer at a second current density greater than the first current density;
depositing an anodically active material over the three-dimensional copper-tin-iron porous conductive matrix, wherein the plating solution comprises a tin source, a copper source, and an iron source; and
depositing a metal oxide material over the anodically active material.
16. The method of claim 15 , wherein the metal oxide material is at least one of: titanium oxide or aluminum oxide.
17. The method of claim 16 , wherein the anodically active material comprises at least one of: a silicon containing material and a graphite containing material.
18. The method of claim 17 , wherein the three-dimensional copper-tin-iron porous conductive matrix further comprises lithium.
19. The method of claim 15 , wherein the anodically active material comprises at least one of: silicon particles and graphite particles that are coated with the metal oxide material prior to depositing the anodically active material over the three-dimensional copper-tin-iron porous conductive matrix.
20. The method of claim 15 , wherein the plurality of columnar projections comprise a macro-porous structure that has a plurality of macroscopic pores between about 5 and about 200 microns in size and the porous conductive dendritic structures have a plurality of meso-pores that are between about 10 nanometers and about 1,000 nanometers in size.