Anti-reflective layer and method
A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating component in order to form a floating region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating component may be a floating cross-linking agent, a floating polymer resin, or a floating catalyst. The floating cross-linking agent, the floating polymer resin, or the floating catalyst may comprise a fluorine atom.
1. A method for manufacturing a semiconductor device, the method comprising:
dispensing an anti-reflective material over a substrate to form an anti-reflective coating layer, the anti-reflective material having a first concentration of a floating component;
forming a floating region adjacent to a top surface of the anti-reflective coating, the floating region having a second concentration of the floating component greater than the first concentration; and
performing a chemical mechanical polish on the anti-reflective coating.
2. The method of claim 1 , wherein the floating component is a floating cross-linking agent.
3. The method of claim 1 , wherein the floating component is a floating polymer resin.
4. The method of claim 1 , wherein the floating component comprises a fluorine atom.
5. The method of claim 4 , wherein the fluorine atom is in a fluoralkyl group.
6. The method of claim 5 , wherein the fluoroalkyl group comprises C 3 F 7 .
7. A method of manufacturing a semiconductor device, the method comprising:
applying an anti-reflective coating onto a substrate, the anti-reflective coating comprising at least one component that has a fluorine atom;
forming a floating region along a top surface of the anti-reflective coating, wherein the floating region has a thickness of at least 10 {acute over (Å)} and has a higher concentration of the at least one component than a remainder of the anti-reflective coating, wherein after the forming the floating region a second component has a constant concentration throughout the anti-reflective coating; and
baking the anti-reflective coating to initiate a cross-linking reaction in the floating region.
8. The method of claim 7 , wherein the at least one component that has the fluorine atom is a cross-linking agent.
9. The method of claim 7 , wherein the at least one component that has the fluorine atom is a polymer resin.
10. The method of claim 7 , further comprising:
applying a photoresist to the anti-reflective coating;
exposing the photoresist to a patterned energy; and
developing the photoresist.
11. The method of claim 7 , further comprising performing a mechanical polish on the anti-reflective coating.
12. The method of claim 7 , wherein the fluorine atom is part of a fluoralkyl group.
13. The method of claim 12 , wherein the fluoroalkyl group comprises C 3 F 7 .
14. The method of claim 7 , wherein the at least one component has the following structure:
15. An anti-reflective material comprising:
a polymer resin;
a cross-linking agent, wherein one of the polymer resin or the cross-linking agent comprises a fluorine atom, wherein the one of the polymer resin or the cross-linking agent has a first concentration in a first portion of a first phase of the anti-reflective material of between about 0.01% and about 10% and a second concentration less than the first concentration in a second portion of the first phase of the anti-reflective material; and
a catalyst.
16. The anti-reflective material of claim 15 , wherein the polymer resin comprises the fluorine atom.
17. The anti-reflective material of claim 15 , wherein the cross-linking agent comprises the fluorine atom.
18. The anti-reflective material of claim 15 , wherein the fluorine atom is in a fluoralkyl group.
19. The anti-reflective material of claim 18 , wherein the fluoroalkyl group is C 3 F 7 .
20. The anti-reflective material of claim 15 , further comprising a solvent.