Array substrate and manufacturing method thereof

1. A method for manufacturing an array substrate comprising:

forming patterns of a thin film transistor structure and a passivation layer on a base substrate to define a pixel region of a pixel unit on the base substrate;

forming patterns of a transflective layer and a color filter in a pixel region of the pixel unit, the color filter disposed over the transflective layer; and

forming an organic light-emitting diode in the pixel region of the pixel unit, wherein the transflective layer and the color filter are disposed between the organic light-emitting diode and the thin film transistor structure, and

wherein the transflective layer is both physically and electrically separated from a pixel electrode of the organic light-emitting diode, the pixel electrode being electrically connected to the thin film transistor structure in the pixel region of the pixel unit.

2. The method according to claim 1 , wherein forming patterns of the transflective layer and the color filter in the pixel region of the pixel unit comprising:

forming a transflective film on the passivation layer;

forming a color filter film of one color on the transflective film, forming patterns of a color filter of the color in the pixel region through a patterning process, and forming patterns of color filters of other colors sequentially in this manner, so that patterns of the color filters is formed; and

etching a portion of the transflective film not covered by the color filter to form patterns of the transflective layer.

3. The method according to claim 2 , wherein, in the formed color filters, the color filters of different colors have different thicknesses.

4. The method according to claim 1 , wherein, forming the organic light-emitting diode in the pixel region of the pixel unit comprising:

forming via holes on the passivation layer by etching through a patterning process;

forming a transparent conductive film on the passivation layer, and forming a pattern of a first electrode of the organic light-emitting diode through a patterning process, the first electrode being connected to the thin film transistor structure through via holes;

forming an insulation film over the thin film transistor structure, and forming a pattern of a pixel define layer through a patterning process to define a position of the organic light-emitting diode to be formed in the pixel region;

forming an organic light-emitting layer on the pixel define layer and on the first electrode; and

forming a second electrode of the organic light-emitting diode on the organic light-emitting layer for reflecting light.

5. The method according to claim 1 , wherein a resin layer is formed on the color filter and on the passivation layer after forming patterns of the transflective layer and the color filter and before forming the organic light-emitting diode.

6. The method according to claim 5 , wherein, forming the organic light-emitting diode in the pixel region of the pixel unit comprising:

forming via holes penetrating the resin layer and the passivation layer through a patterning process; forming a transparent conductive film on the resin layer and forming a pattern of a first electrode of the organic light-emitting diode through a patterning process, the first electrode being connected to the thin film transistor structure through the via holes;

forming an insulation film on the thin film transistor structure, forming a pattern of a pixel define layer through a patterning process to define a position of the organic light-emitting diode to be formed in the pixel region;

forming an organic light-emitting layer on the pixel define layer and on the first electrode; and

forming a second electrode of the organic light-emitting diode on the organic light-emitting layer, the second electrode used for reflecting light.

7. The method according to claim 1 , wherein the transflective layer is made of any one of silver, aluminum, molybdenum, copper, titanium and chromium and alloys thereof and has a transmittance in a range of 5% to 95%.

8. The method according to claim 1 , wherein the transflective layer has a thickness in a range of 10 Å to 200 Å.

9. The method according to claim 1 , wherein the color filter has a thickness in a range of 1000 Å to 40000 Å.

10. An array substrate formed with the method according to claim 1 .