Pulse shaping device and pulse shaping method

1. A pulse shaping device comprising:

a pulse generator configured to generate pulsed light by using a semiconductor laser for emitting light of a predetermined wavelength;

an optical member provided in a subsequent stage of the pulse generator, the optical member configured such that the generated pulsed light propagating in a forward direction of the x-axis is incident on the optical member, and the optical member is configured to compress a pulse time width of the pulsed light; and

a mirror disposed in a subsequent stage of the optical member and configured to reflect the generated pulsed light from the optical member such that the reflected light from the mirror propagates through an inside of the optical member,

wherein the pulsed light has a first frequency dispersion state, and

wherein the optical member imparts a second frequency dispersion state to the pulsed light, the second frequency dispersion state being a frequency dispersion state opposite to the first frequency dispersion state.

2. The pulse shaping device according to claim 1 ,

wherein the pulsed light has a wavelength ranging from 350 nm to 500 nm,

wherein the first frequency dispersion state is negative dispersion, and

wherein the optical member compresses the pulsed light by imparting positive dispersion as the second frequency dispersion state.

3. The pulse shaping device according to claim 2 , wherein the optical member is made of quartz glass.

4. The pulse shaping device according to claim 3 , wherein the optical member is a single-mode optical fiber.

5. The pulse shaping device according to claim 1 , wherein a degree to which the pulse time width of the pulsed light is compressed is changed depending on an optical path length over which the pulsed light passes through the optical member.

6. The pulse shaping device according to claim 1 , wherein the pulse generator includes a master oscillator power amplifier (MOPA) system for allowing an output from a mode-locked laser diode (MLLD) to be amplified by a semiconductor optical amplifier (SOA) by using the MLLD for allowing the semiconductor laser to be operated in a form of an external cavity.

7. A pulse shaping device comprising:

a pulse generator configured to generate pulsed light by using a semiconductor laser for emitting light with a wavelength ranging from 350 nm to 500 nm;

a quartz glass block provided in a subsequent stage of the pulse generator, the quartz glass block configured such that the generated pulsed light propagating in a forward direction of the x-axis is incident on the quartz glass; and

a mirror disposed on at least one of previous and subsequent stages of the quartz glass block and configured to reflect pulsed light emitted from the pulse generator,

wherein the pulsed light propagates through an inside of the quartz glass block only along a predetermined optical path length by being reflected by the mirror.

8. A pulse shaping method comprising:

generating pulsed light by using a semiconductor laser for emitting light of a predetermined wavelength, wherein the generated pulsed light propagates in a forward direction of the x-axis and is incident on an optical member;

compressing a pulse time width of the pulsed light by allowing the pulsed light to pass through an inside of the optical member; and

reflecting the generated pulsed light from the optical member, by a mirror disposed subsequent to the optical member, such that the reflected light from the mirror propagates through an inside of the optical member,

wherein the pulsed light has a first frequency dispersion state, and

wherein the optical member imparts a second frequency dispersion state to the pulsed light, the second frequency dispersion state being a frequency dispersion state opposite to the first frequency dispersion state.