Solid-state imaging apparatus and electronic apparatus including shielding members connecting with element isolation regions

1. A solid-state imaging apparatus comprising:

a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate;

element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, the element isolation regions including high impurity concentration semiconductor regions having a higher impurity concentration than other semiconductor regions within the element isolation regions; and

shielding members formed on upper surfaces of the element isolation regions,

wherein the high impurity concentration semiconductor regions are connected to at least a part of the shielding members.

2. The solid-state imaging apparatus according to claim 1 ,

wherein the high impurity concentration semiconductor regions of the element isolation regions are directly connected to at least a part of the shielding members.

3. The solid-state imaging apparatus according to claim 1 ,

wherein the high impurity concentration semiconductor regions of the element isolation regions are present only in a surrounding part of the photoelectric conversion regions which photoelectrically convert red light.

4. The solid-state imaging apparatus according to claim 1 ,

wherein each of the element isolation regions between the plurality of photoelectric conversion regions has one of the high impurity concentration semiconductor regions, and

wherein the high impurity concentration semiconductor regions are directly connected to the shielding members on upper surfaces of the high impurity concentration semiconductor regions.

5. The solid-state imaging apparatus according to claim 4 ,

wherein a predetermined voltage is supplied to the shielding members, via a through electrode, from a peripheral circuit arranged surrounding a pixel array which includes the plurality of photoelectric conversion regions and the element isolation regions.

6. The solid-state imaging apparatus according to claim 1 ,

wherein a predetermined voltage is supplied to the shielding members from a peripheral circuit arranged surrounding a pixel array which includes the plurality of photoelectric conversion regions and the element isolation regions.

7. The solid-state imaging apparatus according to claim 1 ,

wherein the high impurity concentration semiconductor regions of the element isolation regions are formed at positions separated from interfaces of the element isolation regions on a rear surface side of the semiconductor substrate, and

wherein the shielding members are embedded inside the element isolation regions.

8. The solid-state imaging apparatus according to claim 1 ,

wherein the high impurity concentration semiconductor regions of the element isolation regions are indirectly connected to at least a part of the shielding members via a conductive material different to a material of the shielding members.

9. The solid-state imaging apparatus according to claim 1 , wherein the other semiconductor regions within the element isolation regions at least partially surround the high impurity concentration semiconductor regions.

10. An electronic apparatus, comprising:

a solid-state imaging apparatus including:

a plurality of photoelectric conversion regions which photoelectrically convert light incident from a rear surface side of a semiconductor substrate;

element isolation regions formed between the plurality of photoelectric conversion regions arranged in a matrix shape, the element isolation regions including impurity concentration semiconductor regions having a higher impurity concentration than other semiconductor regions within the element isolation regions; and

shielding members formed on upper surfaces of the element isolation regions,

wherein the high impurity concentration semiconductor regions are connected to at least a part of the shielding members.

11. The electronic apparatus according to claim 10 ,

wherein the high impurity concentration semiconductor regions of the element isolation regions are directly connected to at least a part of the shielding members.

12. The electronic apparatus according to claim 10 ,

wherein the high impurity concentration semiconductor regions of the element isolation regions are present only in a surrounding part of the photoelectric conversion regions which photoelectrically convert red light.

13. The electronic apparatus according to claim 10 ,

wherein each of the element isolation regions between the plurality of photoelectric conversion regions has one of the high impurity concentration semiconductor regions, and

wherein the high impurity concentration semiconductor regions are directly connected to the shielding members on upper surfaces of the high impurity concentration semiconductor regions.

14. The electronic apparatus according to claim 13 ,

wherein a predetermined voltage is supplied to the shielding members, via a through electrode, from a peripheral circuit arranged surrounding a pixel array which includes the plurality of photoelectric conversion regions and the element isolation regions.

15. The electronic apparatus according to claim 10 ,

wherein a predetermined voltage is supplied to the shielding members from a peripheral circuit arranged surrounding a pixel array which includes the plurality of photoelectric conversion regions and the element isolation regions.

16. The electronic apparatus according to claim 10 ,

wherein the high impurity concentration semiconductor regions of the element isolation regions are formed at positions separated from interfaces of the element isolation regions on a rear surface side of the semiconductor substrate, and

wherein the shielding members are embedded inside the element isolation regions.

17. The electronic apparatus according to claim 10 ,

wherein the high impurity concentration semiconductor regions of the element isolation regions are indirectly connected to at least a part of the shielding members via a conductive material different to a material of the shielding members.

18. The electronic apparatus according to claim 10 , wherein the other semiconductor regions within the other semiconductor regions at least partially surround the high impurity concentration semiconductor regions.