High electron mobility transistor and method of manufacturing the same

1. A high electron mobility transistor (HEMT) comprising:

a channel supply layer on a channel layer,

the channel layer including a first semiconductor material;

the channel supply layer including a second semiconductor material, and

the channel supply layer configured to generate a two-dimensional electron gas (2DEG) in the channel layer;

a source electrode and a drain electrode separated from each other and connected to the channel supply layer;

a depletion forming unit on the channel supply layer, the depletion forming unit configured to form a depletion region in the 2DEG;

a gate electrode on the depletion forming unit;

a bridge that connects the source electrode to the depletion forming unit; and

a contact portion that extends from the bridge to under or into the source electrode,

wherein the depletion forming unit is located to be separated from each of the source electrode and drain electrode.

2. The HEMT of claim 1 , wherein a width of the contact portion is the same as or different than a width of the bridge.

3. HEMT of claim 1 , comprising:

a plurality of depletion forming units on the channel supply layer, the plurality of depletion forming units including a first depletion forming unit and a second depletion forming unit that are separated from each other; and

a plurality of gate electrodes, the plurality of gate electrodes including a first gate electrode on the first depletion forming unit and a second gate electrode on the second depletion forming unit.

4. The HEMT of claim 3 , comprising:

a plurality of bridges on the channel supplying layer, the plurality of bridges including a first bridge, a second bridge, and a third bridge;

a plurality of contact portions, the plurality of contact portions including a first contact portion and a second contact portion, wherein

the second contact portion and the second bridge are the contact portion and the bridge of the contact portion that extends from the bridge to under the source electrode,

the third bridge connects the first depletion forming unit to the second depletion forming unit,

the first bridge connects the second depletion forming unit to the source electrode, and

the first contact portion extends from the first bridge to under the source electrode.

5. The HEMT of claim 3 , wherein

the second gate electrode is a floating electrode, and

the first gate electrode, if a first gate voltage is applied to the first gate electrode, is configured to induce a second gate voltage in the second gate electrode.

6. The HEMT of claim 3 , wherein a second gate voltage induced in the second gate electrode is determined by a first gate voltage applied to the first gate electrode, an interval between the first gate electrode and the second gate electrode, and another interval between the second gate electrode and the source electrode.

7. The HEMT of claim 1 , further comprising:

a thin film between the source electrode and the contact portion.

8. The HEMT of claim 1 , wherein the first semiconductor material is a GaN-based material.

9. The HEMT of claim 1 , wherein the second semiconductor material comprises a nitride including at least one of Al, Ga, and In.

10. The HEMT of claim 1 , wherein the second semiconductor material is doped with an n-type material.

11. The HEMT of claim 1 , further comprising:

a buffer layer, wherein

the buffer layer comprises at least one of a GaN layer, an AlGaN layer, an AlN layer, and an InN layer, and

the channel layer is on the buffer layer.

12. The HEMT of claim 1 , wherein the depletion forming unit comprises a p-type semiconductor material.

13. The HEMT of claim 12 , wherein the depletion forming unit comprises a III-V nitride semiconductor material.

14. The HEMT of claim 1 , wherein a single body includes the depletion forming unit, the bridge, and the contact portion.

15. The HEMT of claim 1 , further comprising:

a passivation layer on the channel supply layer.

16. The HEMT of claim 1 , wherein the bridge is not provided between the depletion forming unit and the drain electrode.

17. A high electron mobility transistor (HEMT) comprising:

a channel supply layer on a channel layer,

the channel layer including a first semiconductor material;

the channel supply layer including a second semiconductor material, and

the channel supply layer configured to generate a two-dimensional electron gas (2DEG) in the channel layer;

a source electrode and a drain electrode separated from each other and connected to the channel supply layer;

a depletion forming unit on the channel supply layer, the depletion forming unit configured to form a depletion region in the 2DEG;

a gate electrode on the depletion forming unit;

a bridge that connects the source electrode to the depletion forming unit;

a contact portion that extends from the bridge to under or into the source electrode;

a plurality of bridges that connect the source electrode to the depletion forming unit, the plurality of bridges including a first bridge and a second bridge between the depletion forming unit and the source electrode;

a plurality of contact portions that extend from the bridge to under or into the source electrode, the plurality of contact portions including a first contact portion and a second portion, wherein

the first contact portion extends from an end portion of the first bridge to under the source electrode,

the second contact portion extends from an end portion of the second bridge to under the source electrode, and

the first contact portion and the first bridge are the contact portion and the bridge of the contact portion that extends from the bridge to under the source electrode.