IP Library › Granted Patent US 9,257,462
Granted Patent B2
US 9,257,462 · App. 13/530,334 · Granted Feb 9, 2016

CMOS image sensor for increasing conversion gain

Inventors: Young Hwan Park (Namyangju-si, KR); Jung Chak Ahn (Yongin-si, KR); Sang Joo Lee (Seongnam-si, KR); Jong Eun Park (Seongnam-si, KR); Young Heub Jang (Suwon-si, KR)
Assignee: Samsung Electronics Co., Ltd.
H01L27/14603H01L27/14641
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Quick Facts
Patent No.
US 9,257,462
App. No.
13/530,334
Granted
Feb 9, 2016
Kind
B2
Abstract

In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.

Claims (98)

1. An image sensor comprising:

a first photodiode configured to convert an optical signal into a photocharge;

a sensing node configured to store the photocharge of the first photodiode;

a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line, and the circuit connected to at least a first conductive contact; and

the output line is between the sensing node and the first conductive contact, the output line surrounding at least one of the sensing node and the first conductive contact such that the output line is configured to shield the sensing node from the first conductive contact.

2. The image sensor of claim 1 , wherein

the circuit includes a transfer transistor configured to transfer the photocharge to the sensing node, the transfer transistor connected to the first conductive contact; and

the output line is between the sensing node and the first conductive contact.

3. The image sensor of claim 2 , wherein the transfer transistor has a gate connected to the first conductive contact for receiving a gate control signal.

4. The image sensor of claim 2 , wherein

the circuit includes a reset transistor configured to reset a voltage level of the sensing node, and the reset transistor is connected to a second conductive contact; and

the output line is between the sensing node and the second conductive contact.

5. The image sensor of claim 4 , wherein

the circuit includes a drive transistor configured to convert the photocharge into the electrical signal.

6. The image sensor of claim 5 , wherein

the circuit includes a select transistor configured to control transfer of the electrical signal to the output line, and the select transistor is connected to a third conductive contact; and

the output line is between the sensing node and the third conductive contact.

7. The image sensor of claim 6 , wherein the output line surrounds the sensing node.

8. The image sensor of claim 7 , wherein the output line is in a same plane as the sensing node.

9. The image sensor of claim 6 , wherein the output line further surrounds the third conductive contact.

10. The image sensor of claim 9 , wherein the output line is in a same plane as the sensing node.

11. The image sensor of claim 5 , wherein

the drive transistor is connected to a voltage supply, and has a drive gate connected to the sensing node.

12. The image sensor of claim 11 , wherein

the circuit includes a select transistor configured to control transfer of the electrical signal to the output line, and the select transistor is connected between the output line and the drive transistor, and has a select gate connected to a third conductive contact; and

the output line is between the sensing node and the third conductive contact.

13. The image sensor of claim 5 , wherein

the drive transistor is connected to the output line, and has a drive gate connected to the sensing node.

14. The image sensor of claim 13 , wherein the circuit includes a select transistor configured to control transfer of the electrical signal to the output line, and the select transistor is connected between a voltage supply and the drive transistor, and has a select gate connected to a third conductive contact; and

the output line is between the sensing node and the third conductive contact.

15. The image sensor of claim 5 , wherein

the reset transistor is connected between a voltage supply contact and the sensing node, and has a reset gate connected to the second conductive contact.

16. The image sensor of claim 15 , wherein

the circuit includes a select transistor configured to control transfer of the electrical signal to the output line, and the select transistor is connected between the voltage supply contact and the drive transistor, and has a select gate connected to a third conductive contact; and

the output line is between the sensing node and the third conductive contact.

17. The image sensor of claim 5 , wherein the transfer transistor has a gate connected to the first conductive contact for receiving a first gate control signal, the reset transistor has a gate connected to the second conductive contact for receiving a second gate control signal, and a select transistor has a gate connected to the third conductive contact for receiving a third gate control signal.

18. The image sensor of claim 1 , wherein

the circuit includes a reset transistor configured to reset a voltage level of the sensing node, and the reset transistor is connected to the first conductive contact; and

the output line is between the sensing node and the first conductive contact.

19. The image sensor of claim 18 , wherein the reset transistor has a gate connected to the first conductive contact for receiving a gate control signal.

20. The image sensor of claim 18 , wherein

the circuit includes a drive transistor configured to convert the photocharge into the electrical signal.

21. The image sensor of claim 20 , wherein

the circuit includes a select transistor configured to control transfer of the electrical signal to the output line, and the select transistor is connected to a second conductive contact; and

the output line is between the sensing node and the second conductive contact.

22. The image sensor of claim 18 , wherein

the circuit includes a transfer transistor configured to transfer the photocharge to the sensing node; and

a control transistor configured to control operation of the transfer transistor, and the control transistor is connected to a second conductive contact.

23. The image sensor of claim 22 , wherein

the control transistor has a gate connected to the second conductive contact.

24. The image sensor of claim 1 , wherein

the circuit includes a drive transistor configured to convert the photocharge into the electrical signal;

the circuit includes a select transistor configured to control transfer of the electrical signal to the output line, and the select transistor is connected to the first conductive contact; and

the output line is between the sensing node and the first conductive contact.

25. The image sensor of claim 24 , wherein the output line surrounds the first conductive contact.

26. The image sensor of claim 24 , wherein the select transistor has a gate connected to the first conductive contact for receiving a gate control signal.

27. The image sensor claim 1 , wherein the output line and the sensing node are in a same plane.

28. The image sensor of claim 1 , wherein the circuit is configured to receive a control signal via a conductive contact.

29. The image sensor of claim 1 , further comprising:

a second photodiode configured to convert the optical signal into the photocharge; and wherein

the sensing node is configured to store the photocharge of the second photodiode.

30. The image sensor of claim 29 , wherein the circuit comprises:

a first transfer transistor configured to transfer the photocharge of the first photodiode to the sensing node, the first transfer transistor connected to the first conductive contact;

a second transfer transistor configured to transfer the photocharge of the second photodiode to the sensing node, the second transfer transistor connected to a second conductive contact;

a reset transistor configured to reset a voltage level of the sensing node, the reset transistor connected to a third conductive contact; and

a drive transistor configured to convert the photocharge at the sensing node into the electrical signal; and wherein

the output line is between the sensing node and at least one of the first through third conductive contacts.

31. The image sensor of claim 30 , wherein the output line is between the sensing node and each of the first through third conductive contacts.

32. The image sensor of claim 30 , wherein the circuit further comprises:

a select transistor configured to control transfer of the electrical signal to the output line, the select transistor is connected to a fourth conductive contact; and

the output line is between the sensing node and at least one of the first through fourth conductive contacts.

33. The image sensor of claim 1 , further comprising:

a second photodiode configured to convert the optical signal into the photocharge;

a third photodiode configured to convert the optical signal into the photocharge;

a fourth photodiode configured to convert the optical signal into the photocharge; and wherein

the sensing node is configured to store the photocharges of the first through fourth photodiodes.

34. The image sensor of claim 33 , wherein the circuit comprises:

a first transfer transistor configured to transfer the photocharge of the first photodiode to the sensing node, the first transfer transistor connected to the first conductive contact;

a second transfer transistor configured to transfer the photocharge of the second photodiode to the sensing node, the second transfer transistor connected to a second conductive contact;

a third transfer transistor configured to transfer the photocharge of the third photodiode to the sensing node, the third transfer transistor connected to a third conductive contact;

a fourth transfer transistor configured to transfer the photocharge of the fourth photodiode to the sensing node, the fourth transfer transistor connected to a fourth conductive contact;

a reset transistor configured to reset a voltage level of the sensing node, the reset transistor connected to a fifth conductive contact; and

a drive transistor configured to convert the photocharge at the sensing node into the electrical signal; and wherein

the output line is between the sensing node and at least one of the first through fifth conductive contacts.

35. The image sensor of claim 34 , wherein the output line is between the sensing node and each of the first through fifth conductive contacts.

36. The image sensor of claim 34 , wherein the circuit further comprises:

a select transistor configured to control transfer of the electrical signal to the output line, the select transistor is connected to a sixth conductive contact; and

the output line is between the sensing node and at least one of the first through sixth conductive contacts.

37. An image sensor comprising:

a photodiode configured to convert an optical signal into a photocharge;

a sensing node configured to store the photocharge;

a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line; and

the output line is between the sensing node and at least one conductive contact, the output line surrounding at least one of the sensing node and the at least one conductive contact such that the output line is configured to shield the sensing node from the at least one conductive contact.

38. An image sensor comprising:

a first photodiode configured to convert an optical signal into a photocharge;

a sensing node configured to store the photocharge of the first photodiode;

a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line; and

the output line is between the sensing node and at least one conductive contact, the output line surrounding at least one of the sensing node and the at least one conductive contact such that the output line is configured to shield the sensing node from the at least one conductive contact.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 22, 2012
From: PARK, YOUNG HWAN; AHN, JUNG CHAK; LEE, SANG JOO; PARK, JONG EUN; JANG, YOUNG HEUB
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 028432/0760 →
Priority Claims (1)
KR 10-2011-0070544 · Jul 15, 2011 · national
Continuity (1)
Related Publication 20130015324A1 · Jan 17, 2013