Composition for forming resist underlayer film, and pattern-forming method
A composition for forming a resist underlayer film includes a polysiloxane, and a solvent composition. The solvent composition includes an organic solvent which includes a compound represented by the following formula (1) or a carbonate compound and which has a standard boiling point of no less than 150.0° C. R 1 and R 2 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or an acyl group having 1 to 4 carbon atoms. R 3 represents a hydrogen atom or a methyl group. n is an integer of 1 to 4. In a case where n is no less than 2, a plurality of R 3 s are identical or different.
1. A composition for forming a resist underlayer film,comprising:
a polysiloxane;
an acid diffusion control agent capable of inhibiting diffustion of an acid; and
a solvent composition capable of dissolving the polysiloxane, the solvent composition comprising:
an organic solvent which comprises a compound represented by formula (1) or a carbonate compound and which has a standard boiling point of no less than 150.0° C., includes a compound
wherein, in the formula (1), R 1 and R 2 each independently represent an alkyl group having 1 to 4 carbon atoms or an acyl group having 1 to 4 carbon atoms; R 3 represents a hydrogen atom or a methyl group; n is an integer of 1 to 4, in a case where n is no less than 2, a plurality of R 3 s are identical or different; a content of the organic solvent in the solvent composition is no less than 1% by mass and no greater than 50% by mass; and
wherein the solvent composition further comprises an alkylene glycol monoalkyl ether acetate compound having a standard boiling point of less than 150.0° C., a content of no less than 50% by mass and no greater than 99% by mass.
2. The composition according to claim 1 , wherein the standard boiling point of the organic solvent is no less than 180° C.
3. The composition according to claim 1 , wherein a static surface tension of the organic solvent is no less than 20 mN/m and no greater than 50 mN/m.
4. The composition according to claim 1 , wherein the alkylene glycol monoalkyl ether acetate compound is a propylene glycol monoalkyl ether acetate compound.
5. The composition according to claim 1 , which is used for is a multilayer resist process.
6. The composition according to claim 1 , wherein the acid diffusion control agent is a nitrogen-containing compound.
7. The composition according to claim 1 , wherein the polysiloxane is a hydrolytic condensate of a compound comprising a silane compound represented by a formula (i):
R A a SiX 4-a (i)
wherein, in the formula (i), R A represents a hydrogen atom, a fluorine atom, an alkyl group having 1 to 5 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, an aryl group having 6 to 20 carbon atoms or a cyano group, wherein a part or all of hydrogen atoms of the alkyl group represented by R A are not substituted or substituted by an epoxyalkyloxy group, an acid anhydride group or a cyano group, and a part or all of hydrogen atoms of the aryl group are not substituted or substituted by a hydroxy group; X represents a halogen atom or —OR B , wherein R B represents a monovalent organic group; a is an integer of 0 to 3, wherein in a case where R A is present in a plurality of number, the plurality of R A s are each identical or different, and in a case where X is present in a plurality of number, the plurality of Xs are each identical or different.
8. The composition according to claim 7 , wherein the organic solvent comprises the compound represented by the formula (1).
9. The composition according to claim 7 , wherein the organic solvent comprises the carbonate compound.
10. The composition according to claim 1 , wherein the organic solvent comprises the compound represented by the formula (1).
11. The composition according to claim 1 , wherein the organic solvent comprises the carbonate compound.
12. The composition according to claim 1 , wherein the organic solvent comprises the compound represented by the formula (1).
13. The composition according to claim 1 , wherein the organic solvent comprises the carbonate compound.
14. The composition according to claim 1 , wherein the acid diffusion control agent is an amide group-containing compound.
15. A pattern-forming method comprising:
providing a resist underlayer film on a substrate using the composition according to claim 1 ;
providing a resist film on the resist underlayer film using a resist composition;
exposing the resist film by irradiation with an exposure light through a photomask;
developing the exposed resist film to form a resist pattern; and
sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask.