Barrier films for thin film encapsulation
A method and apparatus for depositing an inorganic layer onto a substrate is described. The inorganic layer may be part of an encapsulating film utilized in various display applications. The encapsulating film includes one or more inorganic layers as barrier layers to improve water-barrier performance. An oxygen containing gas, such as nitrous oxide, is introduced during the deposition of the inorganic layer. As a result, the inorganic layer is lower in stress and may obtain a water vapor transmission rate (WVTR) of less than 100 mg/m 2 -day.
1. An OLED device, comprising:
an OLED structure formed on a substrate; and
a multilayer encapsulation layer formed over the OLED structure comprising one or more inorganic layers formed over the exposed surface of the OLED structure and the substrate, wherein at least one of the one or more inorganic layers comprises oxygen-doped silicon nitride.
2. The OLED device of claim 1 , wherein the water vapor transmission rate of the inorganic layer is less than 100 mg/m 2 -day.
3. The OLED device of claim 1 , wherein the OLED structure comprises a hole-injection layer, a hole-transport layer, an emissive layer, an electron-transport layer and an electron injection layer.
4. The OLED device of claim 1 , wherein the one or more inorganic layers comprises silicon nitride and has a stress between −2*10 9 dynes/cm 2 and −0.1*10 9 dynes/cm 2 .
5. The OLED device of claim 1 , wherein the one or more inorganic layers further comprise silicon oxynitride (SiON), silicon oxide (SiO), silicon carbide (SiC) or combinations thereof.
6. An OLED device, comprising:
an OLED structure formed on a substrate; and
a multilayer encapsulation layer formed over the OLED structure comprising:
a first inorganic layer formed on the exposed surface of the OLED structure and the substrate;
one or more organic layers formed on the first inorganic layer; and
one or more second inorganic layer formed on at least one of the one or more organic layers, wherein at least one of the one or more second inorganic layers comprises silicon nitride which is doped with an oxygen-containing gas.
7. The OLED device of claim 6 , wherein the oxygen-containing gas is nitrous oxide.
8. The OLED device of claim 6 , wherein the oxygen-containing gas is nitric oxide or ozone.
9. The OLED device of claim 6 , wherein the water vapor transmission rate of the inorganic layer is less than 100 mg/m 2 -day.
10. The OLED device of claim 6 , wherein the OLED structure comprises a hole-injection layer, a hole-transport layer, an emissive layer, an electron-transport layer and an electron injection layer.
11. The OLED device of claim 6 , wherein at least one of the one or more second inorganic layers comprises silicon nitride and has a stress between −2*10 9 dynes/cm 2 and −0.1*10 9 dynes/cm 2 .
12. The OLED device of claim 6 , wherein the one or more second inorganic layers further comprise silicon oxynitride (SiON), silicon oxide (SiO), silicon carbide (SiC) or combinations thereof.
13. The OLED device of claim 6 , wherein the first inorganic layer is an inorganic nitride or an inorganic oxide layer.
14. The OLED device of claim 6 , wherein the one or more second inorganic layers are an inorganic nitride or an inorganic oxide layer.