Semiconducting graphene composition, and electrical device including the same
A graphene composition including a graphene monolayer and an alkali metal disposed on the graphene monolayer.
1. A graphene composition comprising:
a planar-shaped molecular structure consisting of a graphene monolayer; and
an alkali metal disposed on the graphene monolayer,
wherein the alkali metal is in the form of at least one selected from the group consisting of a continuous thin film, a nanorod, and a nanocluster.
2. The graphene composition of claim 1 , wherein the alkali metal comprises at least one element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium, and francium.
3. The graphene composition of claim 1 , wherein the alkali metal is sodium.
4. The graphene composition of claim 1 , wherein the alkali metal is disposed on at least one surface of the graphene monolayer.
5. The graphene composition of claim 1 , wherein the alkali metal has a 2-dimensional thin film structure.
6. The graphene composition of claim 1 , wherein the alkali metal is in the form of a continuous thin film having a thickness of about 2 to about 200 angstroms.
7. The graphene composition of claim 1 , wherein the alkali metal occupies about 30 to about 99 percent of an entire surface of the graphene monolayer.
8. The graphene composition of claim 1 , wherein the alkali metal occupies about 50 to about 90 percent of an entire surface of the graphene monolayer.
9. The graphene composition of claim 1 , wherein the composition has a band gap of about 0.4 electron volt or more.
10. The graphene composition of claim 1 , wherein the graphene composition has a band gap of about 0.45 electron volt to about 0.8 electron volt.
11. The graphene composition of claim 1 , wherein the graphene composition has a band gap of about 0.6 electron volt to about 0.8 electron volt.
12. The graphene composition of claim 1 , wherein the graphene monolayer has an area of 1 square centimeter or more.
13. The graphene composition of claim 1 , wherein the graphene monolayer has 10 or fewer wrinkles per 1000 square micrometers area.
14. The graphene composition of claim 1 , wherein a purity of the graphene monolayer is about 99 percent or more.
15. The graphene composition of claim 1 , wherein a substrate is further disposed under the graphene monolayer.
16. The graphene composition of claim 15 , wherein the substrate comprises at least one selected from the group consisting of a plastic, silicon, a glass, a GaN, a silica, nickel, cobalt, iron, platinum, palladium, gold, aluminum, chromium, copper, manganese, molybdenum, rhodium, iridium, tantalum substrate, titanium, tungsten, uranium; vanadium, and zirconium.
17. An electrical device comprising the graphene composition of claim 1 .
18. The electrical device of claim 17 , wherein the electrical device is at least one selected from the group consisting of a sensor, a bipolar junction transistor, a field effect transistor, a heterojunction bipolar transistor, a single electron transistor, a light emitting diode, and an organic electroluminescent diode.