IP Library Granted Patent US 9,283,633
Granted Patent B2
US 9,283,633 · App. 14/142,371 · Granted Mar 15, 2016

Heat exchanger tube precursor and method of producing the same

Inventors: Masaya Katsumata (Susono, JP); Yasunori Hyogo (Izu, JP)
Assignee: Mitsubishi Aluminum Co. Ltd.
B23K1/0012B23K1/008B23K1/012B23K1/203B23K35/3603F28F19/02F28F19/06F28F21/084B23K35/286B23K35/3605B23K2201/06B23K2201/14B23K2201/34B23K2203/10F28F2255/16Y10T428/13
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Quick Facts
Patent No.
US 9,283,633
App. No.
14/142,371
Granted
Mar 15, 2016
Kind
B2
Abstract

A heat exchanger tube precursor that allows manufacturing a heat exchanger having high corrosion resistance after brazing treatment is provided. The heat exchanger tube precursor includes: an Al alloy tube; and a flux layer including a Si powder, a Zn-containing flux, a Zn-free flux, and a binder, the flux layer being formed on an outer surface of the Al alloy tube.

Claims (14)

1. A heat exchanger tube precursor comprising: an Al alloy tube; and a flux layer including a Si powder, a Zn-containing flux, a Zn-free flux, and a binder, the flux layer being formed on an outer surface of the Al alloy tube,

wherein the Si powder has a particle diameter distribution such that 99% particle diameter (D 99 ) is 5 μm or more and 20 μm or less, and an amount of coarse particles having diameters of not smaller than 5 times (D 99 ) is less than 1 ppm by volume, wherein (D 99 ) denotes a critical diameter defined such that cumulative volume of particles not larger than (D 99 ) constitute 99% by volume of all the particles,

an amount of the Si powder applied on the Al alloy tube is in a range of 1 g/m 2 to 5 g/m 2 ,

an amount of the Zn-containing flux applied on the Al alloy tube is in a range of 3 g/m 2 to 20 g/m 2 , and

50% particle diameter (D 50 ) of the Si powder is (D 99 )×0.05 or more and (D 99 )×0.7 or less, (D 50 ) denoting a critical diameter defined such that cumulative volume of particles not longer than (D 50 ) constitute 50% by volume of all the particles.

2. The heat exchanger tube precursor according to claim 1 , wherein the Zn-containing flux contains at least one selected from ZnF 2 , ZnCl 2 , and KZnF 3 .

3. The heat exchanger tube precursor according to claim 1 , wherein the Zn-free flux contains at least one selected from LiF, KF, CaF 2 , AlF 3 , SiF 4 , KAlF 4 , and KAlF 3 .

4. The heat exchanger tube precursor according to claim 1 , wherein the Al alloy tube is constituted of an alloy containing Si of 0.05% or more and 1.0% or less by weight, Mn of 0.05% or more and 1.2% or less by weight, and the balance being consisting of Al and inevitable impurities.

5. A method of producing a heat exchanger tube precursor, the method comprising the steps of:

classifying a pre-classification Si powder to obtain a post-classification Si powder in which 99% particle diameter (D 99 ) is 5 μm or more and 20 μm or less, an amount of coarse particles having diameters of not smaller than 5 times (D 99 ) is less than 1 ppm by volume, and 50% particle diameter (D 50 ) of the Si powder is (D 99 )×0.05 or more and (D 99 )×0.7 or less;

preparing a coating material including the post-classification Si powder, a Zn-containing flux, a Zn-free flux, and a binder; and

applying the coating material on an Al alloy tube, wherein an amount of the Si powder applied on the Al alloy tube is in a range of 1 g/m 2 to 5 g/m 2 , an amount of the Zn-containing flux applied on the Al alloy tube is in a range of 3 g/m 2 to 20 g/m 2 , (D 99 ) denotes a critical diameter defined such that cumulative volume of particles not larger than (D 99 ) constitute 99% by volume of all the particles, and (D 50 ) denotes a critical diameter defined such that cumulative volume of particles not larger than (D 50 ) constitute 50% by volume of all the particles.

6. The method of producing a heat exchanger tube precursor according to claim 5 , wherein the Zn-containing flux contains at least one selected from ZnF 2 , ZnCl 2 , and KZnF 3 .

7. The method of producing a heat exchanger tube precursor according to claim 5 , wherein the Zn-free flux contains at least one selected from LiF, KF, CaF 2 , AlF 3 , SiF 4 , KAlF 4 , and KAlF 3 .

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 11, 2023
From: ALTEMIRA CO., LTD.
To: MA ALUMINUM CORPORATION
Reel/Frame 065185/0895 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 10, 2023
From: MMA COMPANY, LTD.
To: ALTEMIRA CO., LTD.
Reel/Frame 065164/0726 →
CHANGE OF NAME Recorded Dec 21, 2022
From: MITSUBISHI ALUMINUM CO., LTD.
To: MMA COMPANY, LTD.
Reel/Frame 062202/0216 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 27, 2013
From: KATSUMATA, MASAYA; HYOGO, YASUNORI
To: MITSUBISHI ALUMINUM CO. LTD.
Reel/Frame 031854/0903 →
Priority Claims (1)
JP 2003-128170 · May 6, 2003 · national
Continuity (4)
Continuation In Part 12690685 · Jan 20, 2010
Continuation In Part 11218595 · Sep 6, 2005
Continuation 10823563 · Apr 14, 2004
Related Publication 20140186560A1 · Jul 3, 2014