Solid-state imaging device

1. A solid-state imaging device, comprising:

pixels divided by a grid set diagonally to a column direction;

a green photoelectric conversion film provided for each of the pixels;

a red photoelectric conversion layer arranged to be overlapped by the green photoelectric conversion film in a depth direction; and

a blue photoelectric conversion layer arranged to be overlapped by the green photoelectric conversion film in a depth direction.

2. The solid-state imaging device according to the claim 1 , wherein

the pixels are arranged two-dimensionally by shifting each line of the pixels by ½ pixel.

3. The solid-state imaging device according to the claim 2 , further comprising:

an interpolating processing unit configured to interpolate signals among the pixels according to pixel signals obtained from the green photoelectric conversion film.

4. The solid-state imaging device according to claim 1 , wherein

the red photoelectric conversion layer and the blue photoelectric conversion layer overlap each other to spread over two pixels.

5. The solid-state imaging device according to claim 4 , further comprising:

first floating diffusion shared by the green photoelectric conversion film for two pixels arranged adjacent to each other diagonally to the column direction; and

second floating diffusion shared by the blue photoelectric conversion layer and the red photoelectric conversion layer arranged adjacent to each other diagonally to the column direction.

6. The solid-state imaging device according to claim 5 , wherein

the first floating diffusion and the second floating diffusion are arranged alternately and diagonally to the column direction.

7. The solid-state imaging device according to claim 1 , wherein

the green photoelectric conversion film is formed by an organic photoelectric material, and the red photoelectric conversion layer and the blue photoelectric conversion layer are made of Si.

8. The solid-state imaging device according to claim 1 , further comprising:

a vertical signal line configured to transfer pixel signals read from the pixels to the column direction.

9. The solid-state imaging device according to claim 1 , wherein

the pixels are arranged in a checkerboard pattern diagonally to the column direction.

10. The solid-state imaging device according to claim 9 , wherein

the pixels arranged in a checkerboard pattern are arranged at an angle of 45 degrees relative to the column direction.

11. The solid-state imaging device according to claim 9 , wherein

the red photoelectric conversion layer and the blue photoelectric conversion layer are separately arranged in a checkerboard pattern for each of the pixels.

12. The solid-state imaging device according to claim 11 , wherein

the red photoelectric conversion layer and the blue photoelectric conversion layer are arranged in a checkerboard pattern alternately for each of the pixels.

13. The solid-state imaging device according to claim 12 , further comprising

first floating diffusion shared by the green photoelectric conversion film for two pixels arranged adjacent to each other diagonally to the column direction; and

second floating diffusion shared by the blue photoelectric conversion layer and the red photoelectric conversion layer arranged adjacent to each other diagonally to the column direction.

14. The solid-state imaging device according to claim 13 , wherein

the first floating diffusion and the second floating diffusion are arranged alternately in the diagonal direction.

15. The solid-state imaging device according to claim 12 , further comprising:

first floating diffusion shared by the green photoelectric conversion film for two pixels arranged adjacent to each other to the column direction;

second floating diffusion shared by the blue photoelectric conversion layer for two pixels arranged adjacent to each other to the column direction; and

third floating diffusion shared by the red photoelectric conversion layer arranged adjacent to each other to the column direction.

16. The solid-state imaging device according to claim 15 , wherein

the first floating diffusion and the second floating diffusion are arranged alternately along a first column, and

the first floating diffusion and the third floating diffusion are arranged alternately along a second column.

17. A solid-state imaging device, comprising:

a semiconductor layer;

a red photoelectric conversion layer formed in the semiconductor layer;

a blue photoelectric conversion layer formed in the semiconductor layer;

a red filter provided on the red photoelectric conversion layer;

a blue filter provided on the blue photoelectric conversion layer; and

a green photoelectric conversion film provided on the red filter and the blue filter.

18. The solid-state imaging device according to claim 17 , wherein

the green photoelectric conversion film is made of an organic photoelectric conversion material.

19. The solid-state imaging device according to claim 17 , further comprising:

a storage diode formed in the semiconductor layer and configured to store an electric charge that has been photoelectrically converted in the green photoelectric conversion film.

20. The solid-state imaging device according to claim 19 , further comprising:

a transparent electrode attached to the green photoelectric conversion film; and

a contact plug configured to penetrate through the red filter or the blue filter to connect the transparent electrode with the storage diode.