Light emitting device including light emitting element, outer connection electrodes and resin layer
A semiconductor device has a light emitting element, and a resin layer; the light emitting element includes a semiconductor laminated body in which a first semiconductor layer and a second semiconductor layer are laminated in sequence, a second electrode connected to the second semiconductor layer on an upper surface of the second semiconductor layer that forms an upper surface of the semiconductor laminated body, and a first electrode connected to the first semiconductor layer on an upper surface of the first semiconductor layer in which a portion of the second semiconductor layer on one surface of the semiconductor laminated body is removed and a portion of the first semiconductor layer is exposed; and the resin layer is configured to cover at least a side surface of the light emitting element, and an upper surface of the resin layer is lower than the upper surface of the semiconductor laminated body.
1. A light emitting device comprising:
a light emitting element;
a first outer connection electrode and a second outer connection electrode; and
a resin layer, wherein
the light emitting element includes
a substrate,
a semiconductor laminated body in which a first semiconductor layer and a second semiconductor layer are laminated on the substrate in sequence from a first side to a second side of the light emitting device,
a second electrode connected to the second semiconductor layer on a surface of the second semiconductor layer on the second side, and
a first electrode connected to the first semiconductor layer on a surface of the first semiconductor layer on the second side, the surface of the first semiconductor layer being exposed by removal of a portion of the second semiconductor layer of the semiconductor laminated body from the second side,
the first outer connection electrode and the second outer connection electrode are respectively connected to the first electrode and the second electrode of the light emitting element,
the resin layer covers at least a part of a side surface of the light emitting element so as to cover at least a part of a side surface of the substrate and a side surface of the semiconductor laminated body, and
a position of a surface of the resin layer farthest to the second side is disposed closer to the first side than a position of a surface of the semiconductor laminated body farthest to the second side.
2. The light emitting device of according to claim 1 , wherein
the resin layer is a layer which includes a fluorescent material or a filler.
3. The light emitting device of according to claim 1 , wherein
the resin layer exposes a portion of a side surface of the semiconductor laminated body.
4. The light emitting device of according to claim 1 , wherein
mounting surfaces of the first outer connection electrode and the second outer connection electrode share a same plane or an approximately same plane.
5. The light emitting device of according to claim 1 , wherein
the first electrode includes a first ohmic electrode that is in contact with the first semiconductor layer, and a first electrode layer that is connected to at least a portion of the first ohmic electrode, and
the second electrode includes a second ohmic electrode that is in contact with the second semiconductor layer, and a second electrode layer that is connected to at least a portion of the second ohmic electrode.
6. The light emitting device of according to claim 5 , further comprising
an insulating film that includes through-holes and is disposed on the first ohmic electrode and the second ohmic electrode, and
the first electrode layer and the second electrode layer are respectively connect with the first ohmic electrode and the second ohmic electrode through the through-holes.
7. The light emitting device of according to claim 5 , further comprising
an interlayer insulating film that includes through-holes and is disposed on the first electrode layer and the second electrode layer, and
the first outer connection electrode and the second connection electrode are respectively connect with the first electrode layer and the second electrode layer through the through-holes.
8. The light emitting device of according to claim 5 , wherein
the first electrode layer and the second electrode layer respectively have a connection portion, and
an extension portion that extends from the connection portion and narrows from the connection portion in a plane view.
9. The light emitting device of according to claim 1 , wherein
the first electrode and the exposed first semiconductor layer are disposed on an inner side of the semiconductor laminated body in a plane view.
10. The light emitting device of according to claim 1 , wherein
the first outer connection electrode and the second outer connection electrode are respectively disposed to cover an area above the second semiconductor layer from an area above the first semiconductor layer.
11. The light emitting device of according to claim 1 , further comprising
a second resin layer that contains a fluorescent material on a surface of the light emitting element on the first side.