One-time programmable memories using polysilicon diodes as program selectors
Polysilicon diodes fabricated in standard CMOS logic processes can be used as program selectors for One-Time Programmable (OTP) devices, using electrical fuse, contact/via fuse, contact/via anti-fuse, or gate-oxide breakdown anti-fuse etc. as OTP element The diode can be constructed by P+/N+ implants on a polysilicon as a program selector. The OTP device can have an OTP element coupled to a polysilicon diode. The OTP devices can be used to construct a two-dimensional OTP memory with the N-terminals of the diodes in a row connected as a wordline and the OTP elements in a column connected as a bitline.
1. A One-Time Programmable (OTP) memory, comprising:
a plurality of OTP cells, each including (i) an OTP element and (ii) a diode as program selector constructed from a polysilicon structure having a first terminal from a first region with a first type of dopant, and a second terminal from a second region with a second type of dopant, the first terminal of the diode being coupled to a first terminal of the OTP element, and the OTP element being programmable by conducting a current flowing through the OTP element and the diode.
2. A OTP memory as recited in claim 1 , wherein OTP element is an electrical fuse constructed from at least one of polysilicion, silicided polysilicon, or silicide.
3. A OTP memory as recited in claim 2 , wherein the body of the electrical fuse has a length-to-width ratio of between 0.5 to 6, excluding the contact areas.
4. A OTP memory as recited in claim 2 , wherein OTP element is an electrical fuse constructed from at least one CMOS gate.
5. A OTP memory as recited in claim 1 , wherein the first and second terminals of the diode doped with dopants are separated with a space covered by a silicide block layer that overlaps at least a portion of the first and second terminals.
6. A OTP memory as recited in claim 1 , wherein OTP element is an electrical fuse constructed from at least one CMOS gate.
7. An electronic system as recited in claim 1 , wherein OTP element is an electrical fuse constructed from at least one CMOS gate.
8. A One-Time Programmable (OTP) memory, comprising:
a plurality of OTP cells, each including (i) a polysilicon segment as OTP element, and (ii) a diode as program selector constructed from a polysilicon structure having a first terminal from a first region with a first type of dopant, and a second terminal from a second region with a second type of dopant, the first terminal of the diode being coupled to a first terminal of the OTP element, the OTP element being programmable by conducting a current flowing through the OTP element and the diode, and the polysilicon segment being formed in or on the polysilicon structure.
9. A OTP memory as recited in claim 1 , wherein OTP element is an electrical fuse constructed from at least one of polysilicion, silicided polysilicon, or silicide.
10. A OTP memory as recited in claim 9 , wherein the body of the electrical fuse has a length-to-width ratio of between 0.5 to 6, excluding the contact areas.
11. A OTP memory as recited in claim 8 , wherein the first and second terminals of the diode doped with dopants are separated with a space covered by a silicide block layer that overlaps at least a portion of the first and second terminals.
12. An electronic system, comprising:
a processor; and
at least one OTP memory operatively connected to the processor, the OTP memory comprising:
a plurality of OTP cells, each including an OTP element and a diode as program selector, the diode being constructed from a polysilicon structure having a first terminal from a first region with a first type of dopant, and a second terminal from a second region with a second type of dopant, the first terminal of the diode being coupled to a first terminal of the OTP element, and the OTP element being programmable by conducting a current flowing through the OTP element and the diode.
13. An electronic system as recited in claim 12 , wherein OTP element is an electrical fuse, and wherein the body of the electrical fuse has a length-to-width ratio of between 0.5 to 6, excluding the contact areas.
14. An electronic system as recited in claim 13 , wherein the first and second terminals of the diode doped with dopants are separated with a space covered by a silicide block layer that overlaps at least a portion of the first and second terminals.
15. A One-Time Programmable (OTP) memory, comprises:
a plurality of OTP cells, at least one of the cells comprising:
a diode constructed from a polysilicon structure, the polysilicon structure having a first end doped with a first type of dopant and a second end doped with a second type of dopant, the first end having a first terminal, the second end having a second terminal, the second terminal coupled to a first supply voltage line, and
an OTP element built on the same polysilicon structure with a first end coupled to the first terminal of the diode and a second end coupled to a second supply voltage line;
wherein the OTP element is configured to be programmable by applying voltages in the first and the second supply voltage lines to thereby change its logic state.
16. A OTP memory as recited in claim 15 , wherein OTP element is an electrical fuse constructed from at least one of polysilicion, silicided polysilicon, silicide, or CMOS gate.
17. A OTP memory as recited in claim 16 , wherein the body of the electrical fuse has a length-to-width ratio of between 0.5 to 6, excluding the contact areas.
18. A OTP memory as recited in claim 16 , wherein the width of the electrical fuse is substantially close to the minimum figure width.
19. A OTP memory as recited in claim 16 , wherein the electrical fuse or the diode has only one contact in at least one end.
20. A OTP memory as recited in claim 16 , wherein a plurality of the electrical fuses have the second terminals coupled by polysilicon.
21. A OTP memory as recited in claim 20 , wherein the number of the electrical fuses that have the second terminals coupled by polysilicon is at least one row or one column of cells in at least one OTP memory array.
22. A OTP memory as recited in claim 20 , wherein the electrical fuses that have the second terminals coupled by polysilicon are strapped by metals.
23. A OTP memory as recited in claim 15 , wherein the first and second ends of the diode doped with dopants are separated with a space covered by a silicide block layer that overlaps at least a portion of the first and second ends.
24. An electronic system comprises:
a processor; and
a One-Time Programmable (OTP) memory operatively connected to the processor, the OTP memory comprises a plurality of OTP cells, at least one of the cells comprising:
a diode constructed from a polysilicon structure, the polysilicon structure having a first end doped with a first type of dopant and a second end doped with a second type of dopant, the first end having a first terminal, the second end having a second terminal, the first terminal coupled to an OTP element and the second terminal coupled to a first supply voltage line; and
an OTP element built on the same polysilicon structure with a first end coupled to the first terminal of the diode and a second end coupled to a second supply voltage line;
wherein the OTP element is configured to be programmable by applying voltages to the first and the second supply voltage lines to thereby change the resistance into a different logic state.
25. An electronic system as recited in claim 24 , wherein the OTP element is an electrical fuse.
26. An electronic system as recited in claim 25 , wherein the electrical fuse is constructed from polysilicion, silicided polysilicon, silicide, or CMOS gate.
27. A OTP memory as recited in claim 25 , wherein a plurality of the electrical fuses have the second terminals coupled by polysilicon.
28. A OTP memory as recited in claim 25 , wherein the number of the electrical fuses that have the second terminals coupled by polysilicon is at least one row or one column of cells in at least one OTP memory array.