Patent Assignment
Reel/Frame 039919/0229
Assignment of Assignor's Interest
Recorded: 2016-09-06
Pages: 7
Assignor
CHUNG, SHINE C.
Executed: 2016-08-24
Assignee
ATTOPSEMI TECHNOLOGY CO., LTD
1A2-A1 NO. 1 LI-HSIN 1ST RD, HSINCHU, 300-78, TAIWAN
Covered Properties
(72)
Method and System of Using One-Time Programmable Memory as Multi-Time Programmable in Code Memory of Processors
Application:
13/214,183 →
Publication:
US 2012/0047322
Circuit and System of a High Density Anti-Fuse
Structures and Techniques for Electro-Static Discharge (Esd) Protection Using Ring Structured Diodes
Application:
13/678,539 →
Publication:
US 2014/0131710
Structures and Techniques for Using Mesh-Structure Diodes for Electro-Static Discharge (Esd) Protection
Application:
13/678,541 →
Publication:
US 2014/0133056
Electronic System Including a Semiconductor Body to Construct Bipolar Junction Transistors
Application:
13/678,543 →
Circuit and System of Using Junction Diode as Program Selector for Metal Fuses for One-Time Programmable Devices
Programmable Resistive Device and Memory Using Diode as Selector
Method and Structure for Reliable Electrical Fuse Programming
One-Time Programmable Devices Having Program Selector for Electrical Fuses with Extended Area
Circuit and System of Using Finfet for Building Programmable Resistive Devices
Programmably Reversible Resistive Device Cells Using Cmos Logic Processes
System and method of a novel redundancy scheme for OTP
ONE-TIME PROGRAMMABLE MEMORY DEVICES USING FinFET TECHNOLOGY
Circuit and System of Using Junction Diode as Program Selector for One-Time Programmable Devices with Heat Sink
Method and System of programmable resistive devices with Read Capability Using a Low Supply Voltage
Circuit and Method for Power-On Reset of an Integrated Circuit
Application:
14/985,095 →
Publication:
US 2016/0191041
Circuit and System of Using Junction Diode As Program Selector for Resistive Devices in CMOS Logic Processes
Application:
61/375,653 →
Circuit and System of Using Polysilicon Diode As Program Selector for Resistive Devices in CMOS Logic Processes
Application:
61/375,660 →
Multiple-Bit Programmable Resistive Memory Using Diode as Program Selector
Application:
61/525,741 →
Circuit and System of Using Junction Diode As Program Selector for One-Time Programmable Devices
Application:
61/609,353 →
Circuit and System of Using Junction Diode as Program Selector and Mos as Read Selector for One-Time Programmable Devices
Application:
61/668,031 →
Circuit and System of Using Junction Diode as Program Selector for Metal Fuses for One-Time Programmable Devices
Application:
61/684,800 →
Circuit and System of Using Junction Diode as Program Selector for One-Time Programmable Devices with Heat Sink
Application:
61/728,240 →
Circuit and System of Using Junction Diode as Program Selector for Electrical Fuses with Extended Area for One-Time Programmable Devices
Application:
61/880,916 →
Circuit and System of Using Junction Diode or Channel of Mos as Program Selector for Programmable Resistive Devices
Application:
61/981,212 →
Circuit and Method of A Power-On Reset
Application:
62/097,611 →
Memory Devices Using a Plurality of Diodes as Program Selectors with at Least One Being a Polysilicon Diode
Circuit and System of Using Junction Diode as Program Selector for One-Time Programmable Devices
Circuit and System of Using a Polysilicon Diode as Program Selector for Resistive Devices in Cmos Logic Processes
Circuit and System of Using Junction Diode as Program Selector for One-Time Programmable Devices
Programmably Reversible Resistive Device Cells Using Polysilicon Diodes
Memory Using a Plurality of Diodes as Program Selectors with at Least One Being a Polysilicon Diode
One-Time Programmable Memories Using Polysilicon Diodes as Program Selectors
Circuit and Method of a Memory Compiler Based on Subtractive Approach
Circuit and System of Using Polysilicon Diode as Program Selector for One-Time Programmable Devices
Reversible Resistive Memory Using Polysilicon Diodes as Program Selectors
One-Time Programmable Memories Using Junction Diodes as Program Selectors
Circuit and System of Using at Least One Junction Diode as Program Selector for Memories
Reversible Resistive Memory Using Diodes Formed in Cmos Processes as Program Selectors
Sensing Circuit for Programmable Resistive Device Using Diode as Program Selector
Circuit and System of Using Junction Diode as Program Selector and Mos as Read Selector for One-Time Programmable Devices
Circuit and System of Using Finfet for Building Programmable Resistive Devices
Programmably Reversible Resistive Device Cells Using Cmos Logic Processes
Circuit and System of a Low Density One-Time Programmable Memory
Circuit and System of Using Junction Diode as Program Selector for One-Time Programmable Devices
Structures and Techniques for Using Semiconductor Body to Construct Bipolar Junction Transistors
Circuit and System for Using Junction Diode as Program Selector for One-Time Programmable Devices
System and Method of in-System Repairs or Configurations for Memories
Circuit and System for Testing a One-Time Programmable (Otp) Memory
Low-Pin-Count Non-Volatile Memory Embedded in a Integrated Circuit Without Any Additional Pins for Access
Circuit and System of Using a Junction Diode as Program Selector for Resistive Devices
Low-Pin-Count Non-Volatile Memory Interface
Circuit and System of Protective Mechanisms for Programmable Resistive Memories
Multiple-State One-Time Programmable (Otp) Memory to Function as Multi-Time Programmable (Mtp) Memory
Low-Pin-Count Non-Volatile Memory Interface for 3D Ic
Programmable Resistive Memory Unit with Data and Reference Cells
Programmable Resistive Memory Unit with Multiple Cells to Improve Yield and Reliability
Circuit and System of Using Junction Diode as Porgram Selector for One-Time Programmable Devices with Heat Sink
Low-Pin-Count Non-Volatile Memory Interface with Soft Programming Capability
OTP Memories Functioning as an MTP Memory
Structures and Techniques for Using Mesh-Structure Diodes for Electro-Static Discharge (Esd) Protection
Circuits and Methods of a Self-Timed High Speed Sram
Circuit and System of Aggregated Area Anti-Fuse in Cmos Processes
Circuit and System of Using Junction Diode of Mos as Program Selector for Programmable Resistive Devices
Multiple-Bit Programmable Resistive Memory Using Diode as Program Selector
Low-Pin-Count Non-Volatile Memory Interface
Low-Pin-Count Non-Volatile Memory Interface for 3D IC
One-Time Programmable Memories Using Polysilicon Diodes as Program Selectors
Circuit and System for Concurrently Programming Multiple Bits of Otp Memory Devices
Structures and Techniques for Using Semiconductor Body to Construct Scr, Diac, or Triac
Low-Pin-Count Non-Volatile Memory Interface with Soft Programming Capability
Memory Devices Using a Plurality of Diodes as Program Selectors for Memory Cells