Chalcopyrite-type semiconductor photovoltaic device
A scribed photovoltaic device, comprising a photovoltaic device configured for generating electrical energy responsive to receiving solar radiation, the photovoltaic device comprising a plurality of electrically connected photovoltaic sections comprising a photovoltaic light absorbing chalcopyrite semiconductor region (“PLACS region”) disposed between first and second electrode regions. The photovoltaic sections can each comprise a scribe channel extending along and into two of the regions, wherein the scribe channel can comprise a pair of spaced opposing sidewalls of one of the regions, a pair of terraces comprising a pair of spaced opposing terrace shoulders, and a second pair of spaced opposing sidewalls of another one of the regions, with the spacing of the second pair of sidewalls being different than the spacing of the first pair of sidewalls. The spacing of the second pair of sidewalls can be less than the spacing of the first pair of sidewalls, and another one of the regions comprises the PLACS region.
1. A scribed photovoltaic device, comprising:
a photovoltaic device configured for generating electrical energy responsive to receiving solar radiation, the photovoltaic device comprising a plurality of electrically connected photovoltaic sections comprising a photovoltaic light absorbing chalcopyrite semiconductor region (“PLACS region”) disposed between first and second electrode regions;
the photovoltaic sections comprising a scribe channel extending along and into two of the regions;
the scribe channel comprising a pair of spaced opposing sidewalls of one of the regions, a pair of terraces comprising a pair of spaced opposing terrace shoulders, and a second pair of spaced opposing sidewalls of another one of the regions, the spacing of the second pair of sidewalls being different than the spacing of the first pair of sidewalls;
wherein the spacing of the second pair of sidewalls is less than the spacing of the first pair of sidewalls; and
wherein said another one of the regions comprises the PLACS region.
2. The scribed photovoltaic device of claim 1 wherein the pair of terraces of the scribe channel comprises a surface of said another one of the regions.
3. The scribed photovoltaic device of claim 1 wherein the one of the regions comprises one of the electrode regions, said one of the electrode regions being optically transparent.
4. The scribed photovoltaic device of claim 3 wherein said one of the electrode regions comprises doped zinc oxide.
5. The scribed photovoltaic device of claim 1 wherein said scribe channel is at least partially filled with an electrically insulating material.
6. The scribed photovoltaic device of claim 1 wherein said scribe channel comprises a laser formed scribe channel.
7. The scribed photovoltaic device of claim of claim 4 wherein said doped zinc oxide is doped with aluminum.
8. The scribed photovoltaic device of claim 4 wherein said scribe channel comprises a laser formed scribe channel.
9. The scribed photovoltaic device of claim 3 comprising a buffer interposed between the PLACS region and said one of the electrode regions, the buffer including a layer of cadmium sulphide (CdS).
10. The scribed photovoltaic device of claim 1 wherein said PLACS region comprises copper indium diselenide (CuInSe2).
11. The scribed photovoltaic device of claim 1 wherein said PLACS region comprises copper indium gallium diselenide (CuInGaSe2).
12. The scribed photovoltaic device of claim 1 wherein said PLACS region comprises copper indium gallium disulphide (CuInGaS2).
13. The scribed photovoltaic device of claim 1 wherein one of said first and second electrode regions comprises molybdenum.
14. The scribed photovoltaic device of claim 1 wherein said scribed photovoltaic device comprises a substrate, said substrate comprising a polymer.
15. The scribed photovoltaic device of claim 1 wherein said scribed photovoltaic device comprises a substrate, said substrate comprising a metal.
16. The scribed photovoltaic device of claim 1 wherein said scribed photovoltaic device comprises a substrate, said substrate comprising a glass.