Method of producing crystalline substrate having concave-convex structure
A method of producing the crystalline substrate having a concave-convex structure includes: (A) forming a transfer film by forming a concave-convex film on a support film on the surface having a concave-convex pattern thereon so that thickness of the residual film of the concave-convex film is 0.01 to 1 μm, the concave-convex pattern of the support film having concave parts with a width of 0.05 to 100 μm, a depth of 0.05 to 10 μm, and a ratio of the depth of the concave part to the width of the concave part of up to 1.5, (B) disposing the transfer film on the crystalline substrate, and transferring the concave-convex film onto the crystalline substrate to produce a crystalline substrate having the concave-convex film thereon, (C) etching the crystalline substrate having the concave-convex film thereon to form a concave-convex structure on the surface of a crystalline substrate.
1. A method of producing a crystalline substrate having a concave-convex structure comprising:
(A) forming a transfer film by forming a concave-convex film on a support film on a surface having a concave-convex pattern thereon so that thickness h of a residual film of the concave-convex film is 0.01 to 1 μm, the concave-convex pattern of the support film having concave parts with a width w of 0.05 to 100 μm, a depth d of 0.05 to 10 μm, and a ratio d/w of the depth d of a concave part to the width w of the concave part of up to 1.5,
(B) disposing the transfer film on the crystalline substrate, and transferring the concave-convex film onto the crystalline substrate to produce a crystalline substrate having the concave-convex film thereon, and
(C) etching the crystalline substrate having the concave-convex film thereon to form a concave-convex structure on the surface of a crystalline substrate.
2. The method according to claim 1 , wherein the ratio (d/h) of the depth d of the concave part to the thickness h of the residual film is at least 0.5.
3. The method according to claim 1 , wherein the concave-convex film is formed on the surface of the support film having the concave-convex pattern so that evenness of the residual film thickness is up to 25%.
4. The method according to claim 1 , wherein the concave-convex film contains a novolac resin or a polyimide resin as its main component.
5. The method according to claim 4 , wherein the crystalline substrate having the concave-convex film is etched by dry etching.
6. The method according to claim 1 , wherein the concave-convex film contains a siloxane oligomer, and ratio of the number of silicon atoms to the total number of carbon, oxygen, and silicon atoms measured by X-ray photoelectron spectroscopy (XPS) is 5 to 33 atom %.
7. The method according to claim 6 , wherein the crystalline substrate having the concave-convex film is etched by wet etching.
8. The method according to claim 1 , wherein surface free energy of the surface of the support film having the concave-convex pattern is 23 to 70 mN/m.
9. The method according to claim 1 , wherein the surface of the support film having the concave-convex pattern contains a polyolefin resin or an acrylic resin as its main component.
10. A light-emitting device having a chip which has been divided from the crystalline substrate having a concave-convex structure produced by the method of claim 1 .
11. The method according to claim 2 , wherein the concave-convex film is formed on the surface of the support film having the concave-convex pattern so that evenness of the residual film thickness is up to 25%.
12. The method according to claim 2 , wherein the concave-convex film contains a novolac resin or a polyimide resin as its main component.
13. The method according to claim 3 , wherein the concave-convex film contains a novolac resin or a polyimide resin as its main component.
14. The method according to claim 2 , wherein the concave-convex film contains a siloxane oligomer, and ratio of the number of silicon atoms to the total number of carbon, oxygen, and silicon atoms measured by X-ray photoelectron spectroscopy (XPS) is 5 to 33 atom %.
15. The method according to claim 3 , wherein the concave-convex film contains a siloxane oligomer, and ratio of the number of silicon atoms to the total number of carbon, oxygen, and silicon atoms measured by X-ray photoelectron spectroscopy (XPS) is 5 to 33 atom %.
16. The method according to claim 2 , wherein surface free energy of the surface of the support film having the concave-convex pattern is 23 to 70 mN/m.
17. The method according to claim 3 , wherein surface free energy of the surface of the support film having the concave-convex pattern is 23 to 70 mN/m.
18. The method according to claim 4 , wherein surface free energy of the surface of the support film having the concave-convex pattern is 23 to 70 mN/m.
19. The method according to claim 5 , wherein surface free energy of the surface of the support film having the concave-convex pattern is 23 to 70 mN/m.
20. The method according to claim 6 , wherein surface free energy of the surface of the support film having the concave-convex pattern is 23 to 70 mN/m.