Multi-level cell memory device and method of operating multi-level cell memory device
A read method of a multi-level cell memory device includes receiving a first read command, and reading first and second hard decision data by performing first and second hard decision read operations using a first hard decision read voltage and a second hard decision read voltage, respectively, the second hard decision read voltage being higher than the first hard decision read voltage. The method further includes selecting one of the first and second hard decision read voltages, reading first soft decision data by performing a first soft decision read operation using a plurality of soft decision read voltages having voltage levels which are different from that of the selected one of the first and second hard decision read voltages, and providing the first soft decision data to a memory controller for first error correction code (ECC) decoding.
1. A read method executed by a multi-level cell memory device which is connected with a memory controller, the method comprising:
receiving a first read command;
reading, in response to receiving the first read command, first and second hard decision data by performing first and second hard decision read operations using a first hard decision read voltage and a second hard decision read voltage, respectively, the second hard decision read voltage being different from the first hard decision read voltage;
selecting one of the first and second hard decision read voltages as a selected hard decision read voltage;
reading first soft decision data by performing a first soft decision read operation using a plurality of soft decision read voltages corresponding to the selected hard decision read voltage and having respective voltage levels which are different from each other and the voltage level of the selected hard decision read voltage;
providing the first soft decision data to the memory controller for first error correction code (ECC) decoding;
reading, in response to receiving from the memory controller a signal indicating a failure of the first ECC decoding on the first soft decision data, second soft decision data by performing a second soft decision read operation using a plurality of soft decision read voltages corresponding to the non-selected one of the first and second hard decision read voltages and having respective voltage levels which are different from each other and the voltage level of the non-selected one of the first and second hard decision read voltages; and
providing the second soft decision data to the memory controller for second ECC decoding.
2. The read method of claim 1 , further comprising, during execution of the first error correction code decoding, reading the second soft decision data by performing the second soft decision read operation using the plurality of soft decision read voltages and providing the second soft decision data to the memory controller for second ECC decoding.
3. A read method executed by a multi-level cell memory device which is connected with a memory controller, the method comprising:
receiving a first read command;
reading, in response to receiving the first read command, first and second hard decision data by performing first and second hard decision read operations using a first hard decision read voltage and a second hard decision read voltage, respectively, the second hard decision read voltage being different from the first hard decision read voltage;
selecting one of the first and second hard decision read voltages as a selected hard decision read voltage;
reading first soft decision data by performing a first soft decision read operation using a plurality of soft decision read voltages corresponding to the selected hard decision read voltage and having respective voltage levels which are different from each other and the voltage level of the selected hard decision read voltage; and
providing the first soft decision data to the memory controller for first error correction code (ECC) decoding, wherein
the selection of one of the first and second hard decision read voltages is made according to comparison results obtained using the first and second hard decision read data.
4. A read method executed by a multi-level cell memory device, the method comprising:
receiving a first read command;
performing, in response to receiving the first read command, first and second hard decision read operations using respective first and second hard decision read voltages, which are different from each other, to read first and second hard decision data;
upon a failure of error bit correction on the first and second hard decision data, receiving a second read command;
reading, in response to receiving the second read command, first soft decision data using a plurality of first soft decision read voltages corresponding to the first hard decision read voltage and having voltage levels that differ from each other and the voltage level of the first hard decision read voltage;
providing the first soft decision data to an external device for first error correction code (ECC) decoding;
reading, in response to receiving from the external device a signal indicating a failure of the first ECC decoding on the first soft decision data, second soft decision data by performing a second soft decision read operation using a plurality of second soft decision read voltages corresponding to the second hard decision read voltage and having respective voltage levels which are different from each other and the voltage level of the second hard decision read voltage; and
providing the second soft decision data to the outside of the multi-level cell memory device for second ECC decoding.
5. The read method of claim 4 , further comprising, during execution of the first ECC decoding, performing the second soft decision read operation using the plurality of second soft decision read voltages and providing the second soft decision data to the outside of the multi-level cell memory device for second ECC decoding.