Semiconductor device
This device includes a first base layer of a first conduction type. A second base-layer of a second conduction type is provided above the first base-layer. A first semiconductor layer of the first conduction type is above an opposite side of the second base-layer to the first base-layer. A second semiconductor layer of the second conduction type is above an opposite side of the first base-layer to the second base-layer. A plurality of first electrodes are provided at the first semiconductor layer and the second base-layer via first insulating films. A second electrode is provided between adjacent ones of the first electrodes and provided at the first semiconductor layer and the second base-layer via a second insulating film. A resistance of the first base-layer above a side of the second electrode is lower than a resistance of the first base-layer above a side of the first electrodes.
1. A semiconductor device comprising:
a first base layer of a first conduction type;
a second base layer of a second conduction type provided above the first base layer;
a first semiconductor layer of the first conduction type above opposite side of the second base layer to the first base layer;
a second semiconductor layer of the second conduction type above opposite side of the first base layer to the second base layer;
a plurality of first electrodes which are provided at the first semiconductor layer and the second base layer via first insulating films; and
a second electrode provided between adjacent ones of the first electrodes and provided at the first semiconductor layer and the second base layer via a second insulating film, wherein
a resistance of the first base layer above a side of the second electrode is lower than a resistance of the first base layer above a side of the first electrodes.
2. The device of claim 1 , wherein a voltage of the second electrode is substantially equal to a voltage of the first semiconductor layer.
3. The device of claim 1 , wherein a thickness of the second insulating film provided between the first base layer and the second electrode is smaller than a thickness of the first insulating film provided between the first base layer and one of the first electrodes.
4. The device of claim 2 , wherein a thickness of the second insulating film provided between the first base layer and the second electrode is smaller than a thickness of the first insulating film provided between the first base layer and one of the first electrodes.
5. The device of claim 1 , wherein a concentration of a first conduction type impurity at the first base layer above the side of the second electrode is lower than a concentration of the first conduction type impurity at the first base layer above the side of the first electrodes.
6. The device of claim 2 , wherein a concentration of a first conduction type impurity at the first base layer above the side of the second electrode is lower than a concentration of the first conduction type impurity at the first base layer above the side of the first electrodes.
7. The device of claim 1 , further comprising a drift diffusion layer of the second conduction type provided between the first base layer above the side of the second electrode and the second insulating film.
8. The device of claim 1 , further comprising:
a first barrier layer of the first conduction type provided between the first base layer and the second base layer; and
a second barrier layer of the first conduction type provided between the first base layer and the second semiconductor layer.