Sensors using high electron mobility transistors
Embodiments of the invention include sensors comprising high electron mobility transistors (HEMTs) with capture reagents on a gate region of the HEMTs. Example sensors include HEMTs with a thin gold layer on the gate region and bound antibodies; a thin gold layer on the gate region and chelating agents; a non-native gate dielectric on the gate region; and nanorods of a non-native dielectric with an immobilized enzyme on the gate region. Embodiments including antibodies or enzymes can have the antibodies or enzymes bound to the Au-gate via a binding group. Other embodiments of the invention are methods of using the sensors for detecting breast cancer, prostate cancer, kidney injury, glucose, metals or pH where a signal is generated by the HEMT when a solution is contacted with the sensor. The solution can be blood, saliva, urine, breath condensate, or any solution suspected of containing any specific analyte for the sensor.
1. A high electron mobility transistor (HEMT)-based sensor for one or more target molecules in a sample, wherein the HEMT of the sensor comprises:
a gate region having at least one capture reagent thereon; and
a gate dielectric layer comprising nanorods selectively formed on the gate region.
2. The HEMT-based sensor according to claim 1 , wherein the HEMT is an AlGaN/GaN HEMT.
3. The HEMT-based sensor according to claim 2 , wherein the nanorods comprise a metal oxide.
4. The HEMT-based sensor according to claim 3 , wherein the metal oxide comprises at least one of ZnO, SnO, TiO 2 , MgO, ZnMgO, Al 2 O 3 , and In 2 O 3 .
5. The HEMT-based sensor according to claim 4 wherein the capture reagent is immobilized on the nanorods.
6. The HEMT-based sensor according to claim 2 , wherein the nanorods are ZnO nanorods.
7. The HEMT-based sensor according to claim 6 , wherein the capture reagent is immobilized on the nanorods.
8. The HEMT-based sensor according to claim 1 , wherein the nanorods are ZnO nanorods.
9. The HEMT-based sensor according to claim 1 , wherein the HEMT is configured to detect the one or more target molecules in at least one of exhaled breath condensate, saliva, urine, blood, other biological fluids, and other aqueous solutions.
10. The HEMT-based sensor according to claim 1 , wherein the HEMT comprises a two layer structure of group III-IV semiconductor materials, the first layer of the two layer structure being a layer having a first ionic strength and the second layer of the two layer structure being a strained layer on the first layer and having a second ionic strength different than the first ionic strength, wherein a high density electron sheet carrier concentration channel of a 2-dimensional gas channel is induced by piezoelectric polarization of the strained layer and spontaneous polarization of the different ionic strengths between the first layer and the strained layer, and
wherein the sensor is configured such that an output current indicating an amount of target molecules is sensed from a drain of the HEMT with a fixed bias voltage at a source of the HEMT, in response to a change of concentration of the 2-dimensional gas channel resulting from a change of surface charge on the gate region of the HEMT when the gate region is exposed to the one or more target molecules.