Semiconductor device
View Patent ↗The semiconductor device of the present invention comprises first and second transistors and first and second capacitors. One of source and drain electrodes of the first transistor is electrically connected to a first wiring, the other is electrically connected to a second wiring, and a gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor and one of electrodes of the first capacitor. The other of the source and drain electrodes of the second transistor is electrically connected to the first wiring, and a gate electrode of the second transistor is electrically connected to one of electrodes of a second capacitor and a fifth wiring. The other electrode of the first capacitor is electrically connected to a third wiring, and the other electrode of the second capacitor is eclectically connected to a fourth wiring.
1. A semiconductor device comprising:
a first transistor;
a second transistor;
a first capacitor; and
a second capacitor,
wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to a first wiring,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a second wiring,
wherein a gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor and one of electrodes of the first capacitor,
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the first wiring,
wherein a gate electrode of the second transistor is connected to one of electrodes of the second capacitor and a fifth wiring,
wherein the other electrode of the first capacitor is electrically connected to a third wiring, and
wherein the other electrode of the second capacitor is electrically connected to a fourth wiring.
2. The semiconductor device according to claim 1 ,
wherein the second transistor comprises:
an oxide semiconductor layer,
the source electrode and the drain electrode in contact with the oxide semiconductor layer;
a gate insulating film in contact with the oxide semiconductor layer, the source electrode, and the drain electrode; and
the gate electrode overlapping with the oxide semiconductor layer with the gate insulating film positioned therebetween.
3. The semiconductor device according to claim 2 , wherein the oxide semiconductor layer is a stack in which a third oxide semiconductor layer, a second oxide semiconductor layer, and a first oxide semiconductor layer are stacked from a gate insulating film side.
4. The semiconductor device according to claim 3 ,
wherein a bottom of a conduction band of each of the first oxide semiconductor layer and the third oxide semiconductor layer is closer to a vacuum level than a bottom of a conduction band of the second oxide semiconductor layer, and
wherein an energy difference of the bottom of the conduction band between the second oxide semiconductor layer and the first oxide semiconductor layer and an energy difference of the bottom of the conduction band between the second oxide semiconductor layer and the third oxide semiconductor layer are each greater than or equal to 0.05 eV and less than or equal to 2 eV.
5. The semiconductor device according to claim 3 ,
wherein the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer each comprises an In-M-Zn oxide, M being at least one of Al, Ti, Ga, Y, Zr, La, Ce, Nd, and Hf, and
wherein an atomic ratio of M to In in each of the first oxide semiconductor layer and the third oxide semiconductor layer is higher than an atomic ratio of M to In in the second oxide semiconductor layer.
6. The semiconductor device according to claim 1 ,
wherein a channel formation region of the first transistor is formed in a layer including silicon.
7. The semiconductor device according to claim 1 ,
wherein the semiconductor device is a memory device.
8. The semiconductor device according to claim 1 ,
wherein the semiconductor device further comprises one of a diode and a transistor electrically connected to the fifth wiring.
9. A semiconductor device comprising:
a first transistor;
a second transistor;
a diode-connected transistor;
a first capacitor; and
a second capacitor,
wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to a first wiring,
wherein the other of the source electrode and the drain electrode of the first transistor is electrically connected to a second wiring,
wherein a gate electrode of the first transistor is electrically connected to one of a source electrode and a drain electrode of the second transistor and one of electrodes of the first capacitor,
wherein the other of the source electrode and the drain electrode of the second transistor is electrically connected to the first wiring,
wherein a gate electrode of the second transistor is connected to one of electrodes of the second capacitor and the diode-connected transistor,
wherein the other electrode of the first capacitor is electrically connected to a third wiring, and
wherein the other electrode of the second capacitor is electrically connected to a fourth wiring.
10. The semiconductor device according to claim 9 ,
wherein the second transistor comprises:
an oxide semiconductor layer,
the source electrode and the drain electrode in contact with the oxide semiconductor layer;
a gate insulating film in contact with the oxide semiconductor layer, the source electrode, and the drain electrode; and
the gate electrode overlapping with the oxide semiconductor layer with the gate insulating film positioned therebetween.
11. The semiconductor device according to claim 10 , wherein the oxide semiconductor layer is a stack in which a third oxide semiconductor layer, a second oxide semiconductor layer, and a first oxide semiconductor layer are stacked from a gate insulating film side.
12. The semiconductor device according to claim 11 ,
wherein a bottom of a conduction band of each of the first oxide semiconductor layer and the third oxide semiconductor layer is closer to a vacuum level than a bottom of a conduction band of the second oxide semiconductor layer, and
wherein an energy difference of the bottom of the conduction band between the second oxide semiconductor layer and the first oxide semiconductor layer and an energy difference of the bottom of the conduction band between the second oxide semiconductor layer and the third oxide semiconductor layer are each greater than or equal to 0.05 eV and less than or equal to 2 eV.
13. The semiconductor device according to claim 11 ,
wherein the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer each comprises an In-M-Zn oxide, M being at least one of Al, Ti, Ga, Y, Zr, La, Ce, Nd, and Hf, and
wherein an atomic ratio of M to In in each of the first oxide semiconductor layer and the third oxide semiconductor layer is higher than an atomic ratio of M to In in the second oxide semiconductor layer.
14. The semiconductor device according to claim 9 ,
wherein a channel formation region of the first transistor is formed in a layer including silicon.
15. The semiconductor device according to claim 9 ,
wherein the semiconductor device is a memory device.
16. The semiconductor device according to claim 9 ,
wherein the a diode-connected transistor comprises an oxide semiconductor layer.