Transistor device and materials for making
This application relates to graphene based heterostructures and transistor devices comprising graphene. The hetero-structures comprise i) a first graphene layer; ii) a spacer layer and iii) a third graphene. The transistors comprise (i) an electrode, the electrode comprising a graphene layer, and (ii) an insulating barrier layer.
1. A graphene heterostructure having:
a first graphene layer, shaped to form a first structure comprising at least one contact region;
a second graphene layer, shaped to form a second structure comprising at least one contact region; and
a spacer positioned between the first graphene layer and the second graphene layer, wherein the spacer has a thickness in the range 3 to 8 layers of one or more materials;
wherein the graphene heterostructure includes two or more contacts, including a source contact and a drain contact; and
wherein the source contact is positioned on at least one of the contact regions of the first structure; and
wherein the drain contact is positioned on at least one of the contact regions of the second structure.
2. The graphene heterostructure according to claim 1 , wherein the spacer includes hexagonal boron-nitride.
3. The graphene heterostructure according to claim 1 , wherein the spacer lies directly next to the first graphene layer, and the second graphene layer lies directly next to the spacer.
4. The graphene heterostructure according to claim 1 , wherein the spacer has a thickness of 10 nm or less.
5. The graphene heterostructure according to claim 4 , wherein the spacer has a thickness in the range 2 nm to 4 nm.
6. The graphene heterostructure according to claim 1 , wherein the first graphene layer is a single sheet of graphene, and the second graphene layer is a single sheet of graphene.
7. The graphene heterostructure according to claim 1 , wherein the graphene heterostructure includes a base layer on which the first graphene layer is positioned.
8. The graphene heterostructure according to claim 7 , wherein the base layer includes hexagonal boron-nitride.
9. The graphene heterostructure according to claim 7 , wherein the graphene heterostructure includes a substrate on which the base layer is positioned.
10. A transistor comprising:
a source electrode;
a drain electrode; and
an insulating barrier in contact with and situated between both the source electrode and the drain electrode, the insulating barrier comprising from 3 to 8 layers of one or more materials;
wherein at least one of the source electrode and the drain electrode comprises a layer of graphene and the other electrode comprises a layer of a conductive material.
11. The graphene heterostructure according to claim 1 , wherein the graphene heterostructure is comprised in a transistor.
12. The transistor of claim 10 , wherein the transistor is a quantum tunnelling transistor.
13. A transistor comprising:
a source electrode;
a drain electrode; and
an insulating barrier in contact with and situated between both the source electrode and the drain electrode;
wherein the thickness of the insulating barrier layer is selected to provide a quantum tunnelling electron transport between the source electrode and the drain electrode; and
wherein at least one of the source electrode and the drain electrode comprises a layer of graphene and the other electrode comprises a layer of a conductive material.
14. A graphene heterostructure having:
a first graphene layer, shaped to form a first structure comprising at least one contact region;
a second graphene layer, shaped to form a second structure comprising at least one contact region; and
a spacer positioned between the first graphene layer and the second graphene layer, wherein the spacer has a thickness in the range 1 to 30 layers of one or more materials;
wherein the graphene heterostructure includes two or more contacts, including a source contact and a drain contact; and
wherein the source contact is positioned on at least one of the contact regions of the first structure; and
wherein the drain contact is positioned on at least one of the contact regions of the second structure.