Solid-state imaging device, method of manufacturing a solid-state imaging device, and electronic apparatus
Provided is a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function. The solid-state imaging device includes a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
1. A solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function, the solid-state imaging device comprising
a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
2. The solid-state imaging device according to claim 1 , further comprising a vertical transistor configured to transfer charge from the photo diode to the memory.
3. The solid-state imaging device according to claim 2 , further comprising a floating diffusion, wherein
the vertical transistor is disposed at an end of the photo diode such that a pitch of the photo diode coincides with a pitch of the vertical transistor, the memory, and the floating diffusion.
4. The solid-state imaging device according to claim 2 , further comprising a floating diffusion, wherein
the vertical transistor is disposed at the center of the photo diode such that a pitch of the photo diode coincides with a pitch of the vertical transistor, the memory, and the floating diffusion.
5. The solid-state imaging device according to claim 1 , further comprising a floating diffusion, wherein
the photo diode, the memory, and the floating diffusion are provided on respective layers and laminated on one another, to form a three-layer structure.
6. The solid-state imaging device according to claim 1 , wherein
the separation film including the light blocking film is formed of metal.
7. The solid-state imaging device according to claim 6 , wherein
a negative potential is applied to the separation film including the light blocking film and being formed of metal.
8. The solid-state imaging device according to claim 6 , wherein
the separation film including the light blocking film and being formed of metal is connected to an outside of a pixel array.
9. The solid-state imaging device according to claim 1 , wherein
the separation film including the light absorbing film includes a film formed of a compound semiconductor having a chalcopyrite structure.
10. An electronic apparatus including a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function, the electronic apparatus comprising
a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode.
11. A method of manufacturing a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function, the solid-state imaging device including a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode, the method comprising:
a first step of forming an insulating film on one surface of a first substrate on which the memory is formed and an insulating film on one surface of a second substrate on which the photo diode is formed, and forming the separation film on the insulating film of the first substrate and the separation film on the insulating film of the second substrate;
a second step of bonding the first substrate and the second substrate to each other, with the surface of the first substrate on which the separation film is formed and the surface of the second substrate on which the separation film is formed facing each other, to form an integrated substrate; and
a third step of thinning the integrated substrate.
12. The method of manufacturing a solid-state imaging device according to claim 11 , wherein
the first step includes forming an SCF (Si cover film) on each of the one surface of the first substrate and the one surface of the second substrate before the insulating films are formed.
13. The method of manufacturing a solid-state imaging device according to claim 12 , further comprising
a fourth step of forming the photo diode on a surface that is different from the surface of the second substrate on which the insulating film is formed, after the insulating films and the separation films are formed in the first step and before the second step is performed.
14. The method of manufacturing a solid-state imaging device according to claim 12 , further comprising
a fourth step of forming the photo diode on a surface that is different from the surface of the second substrate on which the insulating film is formed, after the third step is performed.
15. A solid-state imaging device manufactured by a method of manufacturing a solid-state imaging device including a lamination-type backside illumination CMOS (Complementary Metal Oxide Semiconductor) image sensor having a global shutter function, the solid-state imaging device including a separation film including one of a light blocking film and a light absorbing film between a memory and a photo diode, the method comprising:
a first step of forming an insulating film on one surface of a first substrate on which the memory is formed and an insulating film on one surface of a second substrate on which the photo diode is formed, and forming the separation film on the insulating film of the first substrate and the separation film on the insulating film of the second substrate;
a second step of bonding the first substrate and the second substrate to each other, with the surface of the first substrate on which the separation film is formed and the surface of the second substrate on which the separation film is formed facing each other, to form an integrated substrate; and
a third step of thinning the integrated substrate.