Light emitting device having group III-nitride current spreading layer doped with transition metal or comprising transition metal nitride
A light-emitting device, such as a light-emitting diode (LED), has a group III-nitride current spreading layer which is either doped with transition metal, or comprises alternating transition metal nitride layer and group III-nitride layer. Also provided is a light-emitting device, such as a light-emitting diode (LED), having a quantum well doped with transition metal. Also provided is a method of forming transition-metal containing AlInGaN electrical conductive material.
1. A III-nitride light emitting device, comprising
a current spreading layer comprising alternating Al x In y Ga 1-x-y N layers and transition-metal nitride layers made of IIIB-VIB nitride, where 0<=x<1, 0<=y<1, x+y<1;
an n-type layer formed on the current spreading layer;
a p-type layer; and
an active-region sandwiched between the n-type layer and the p-type layer
wherein an outmost surface of the current spreading layer facing the n-type layer is a rough surface with uncoalescent Al x In y Ga 1-x-y N networks.
2. The III-nitride light emitting device of claim 1 , wherein a thickness of each of the Al x In y Ga 1-x-y N layers is in the range of 5-100 nm and a thickness of each of the transition-metal nitride layers is in the range of 0.4-10 nm.
3. The III-nitride light emitting device of claim 1 , wherein a thickness of each of the Al x In y Ga 1-x-y N layers and a thickness of each of the transition-metal nitride layers are selected to make the current spreading layer a conductive distributed Bragg reflector (DBR) with visible light reflectivity greater than 80%.
4. The III-nitride light emitting device of claim 1 , wherein the transition-metal nitride layers are made of HfN, ZrN, or TiN.
5. The III-nitride light emitting device of claim 1 , wherein the Al x In y Ga 1-x-y N layers are made of GaN.
6. The III-nitride light emitting device of claim 1 , wherein at least one quantum well in the active-region is doped with a transition metal selected from the group consisting of Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W.
7. The III-nitride light emitting device of claim 6 , wherein said at least one quantum well in the active-region is doped with Hf, Zr, or Ti via introducing tetrakis dimethylamino hafnium, tetrakis dimethylamino titanium, and tetrakis dimethylamino zirconium.
8. The III-nitride light emitting device of claim 2 , wherein the thickness of each of the transition-metal nitride layers is in the range of 0.4-2 nm.
9. The III-nitride light emitting device of claim 8 , wherein at least one of the transition-metal nitride layers is not a continuous layer.
10. The III-nitride light emitting device of claim 4 , wherein the transition-metal nitride layers are made of HfN or ZrN.
11. The III-nitride light emitting device of claim 1 , wherein a thickness of each of the Al x In y Ga 1-x-y N layers is larger than a thickness of each of the transition-metal nitride layers.
12. A III-nitride light emitting device, comprising
a current spreading layer comprising alternating Al x In y Ga 1-x-y N layers and transition-metal nitride layers made of IIIB-VIB nitride, where 0<=x<1, 0<=y<1, x+y<1, wherein a thickness of each of the Al x In y Ga 1-x-y N layers is larger than a thickness of each of the transition-metal nitride layers;
an n-type layer formed on the current spreading layer;
a p-type layer; and
an active-region sandwiched between the n-type layer and the p-type layer.
13. The III-nitride light emitting device of claim 12 , wherein a thickness of each of the Al x In y Ga 1-x-y N layers is in the range of 5-100 nm and a thickness of each of the transition-metal nitride layers is in the range of 0.4-10 nm.
14. The III-nitride light emitting device of claim 13 , wherein the thickness of each of the transition-metal nitride layers is in the range of 0.4-2 nm.
15. The III-nitride light emitting device of claim 13 , wherein at least one of the transition-metal nitride layers is not a continuous layer.
16. The III-nitride light emitting device of claim 12 , wherein a thickness of each of the Al x In y Ga 1-x-y N layers and a thickness of each of the transition-metal nitride layers are selected to make the current spreading layer a conductive distributed Bragg reflector (DBR) with visible light reflectivity greater than 80%.
17. The III-nitride light emitting device of claim 12 , wherein the transition-metal nitride layers are made of HfN, ZrN, or TiN.
18. The III-nitride light emitting device of claim 17 , wherein the transition-metal nitride layers are made of HfN or ZrN.
19. The III-nitride light emitting device of claim 12 , wherein the Al x In y Ga 1-x-y N layers are made of GaN.
20. The III-nitride light emitting device of claim 12 , wherein at least one quantum well in the active-region is doped with a transition metal selected from the group consisting of Sc, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W.
21. The III-nitride light emitting device of claim 20 , wherein said at least one quantum well in the active-region is doped with Hf, Zr, or Ti via introducing tetrakis dimethylamino hafnium, tetrakis dimethylamino titanium, and tetrakis dimethylamino zirconium.