Semiconductor structure with inhomogeneous regions
A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.
1. A semiconductor heterostructure comprising:
a group III nitride semiconductor layer including a plurality of inhomogeneous regions, each inhomogeneous region having a set of attributes differing from a group III nitride material forming the semiconductor layer, wherein the plurality of inhomogeneous regions include:
a set of first inhomogeneous regions configured based on radiation having a target wavelength, wherein the set of first inhomogeneous regions are at least one of: transparent to the radiation or reflective of the radiation; and
a set of second inhomogeneous regions having a conductivity at least ten percent higher than a conductivity of the set of first inhomogeneous regions, wherein each of the sets of inhomogeneous regions occupy at least five percent of at least one of: a lateral planar area of the semiconductor layer or a volume of the semiconductor layer, and wherein at least some of the sets of inhomogeneous regions do not fully overlap.
2. The heterostructure of claim 1 , wherein the set of second inhomogeneous regions includes at least one anisotropic conductive region.
3. The heterostructure of claim 1 , wherein the set of first inhomogeneous regions includes:
a set of transparent regions; and
a set of reflective regions.
4. The heterostructure of claim 1 , wherein the set of first inhomogeneous regions includes a set of reflective regions, and wherein a reflective region in the set of reflective regions is formed of a composite mirror.
5. The heterostructure of claim 4 , wherein the composite mirror comprises a Bragg mirror formed by layers of low index of refraction material alternating with layers of high index of refraction material, wherein the layers of low index of refraction material are selected from a group consisting of: silicon dioxide (SiO2), magnesium oxide (MgO), and magnesium fluoride (MgF2), and wherein the layers of high index of refraction material are selected from a group consisting of: aluminum oxide (Al 2 O 3 ), scandium oxide (Sc 2 O 3 ), magnesium aluminum oxide (MgAl 2 O 3 ), and a group III nitride.
6. The heterostructure of claim 1 , wherein the set of first inhomogeneous regions includes at least one region both transparent and reflective of the radiation.
7. The heterostructure of claim 1 , wherein the set of first inhomogeneous regions includes at least one transparent region forming a Fabry-Perot interface filter for the radiation.
8. The heterostructure of claim 1 , wherein at least one first inhomogeneous region is laterally adjacent to at least one second inhomogeneous region.
9. The heterostructure of claim 1 , wherein the set of first inhomogeneous regions are arranged in a plurality of levels, and wherein first inhomogeneous regions in a first level are offset from first inhomogeneous regions in a second level.
10. The heterostructure of claim 1 , further comprising:
an active region; and
a metallic contact, wherein the semiconductor layer is located between the active region and the metallic contact.
11. An optoelectronic device comprising:
an active region;
a p-type contact layer located on a first side of the active region; and
a n-type contact layer located on a second side of the active region, wherein at least one of the contact layers comprises a group III nitride semiconductor layer including a plurality of inhomogeneous regions, each inhomogeneous region having a set of attributes differing from a group III nitride material forming the semiconductor layer, wherein the plurality of inhomogeneous regions include:
a set of first inhomogeneous regions configured based on radiation having a target wavelength, wherein the set of first inhomogeneous regions are at least one of: transparent to the radiation or reflective of the radiation; and
a set of second inhomogeneous regions having a conductivity at least ten percent higher than a conductivity of the set of first inhomogeneous regions, wherein each of the sets of inhomogeneous regions occupy at least five percent of at least one of: a lateral planar area of the semiconductor layer or a volume of the semiconductor layer, and wherein at least some of the sets of inhomogeneous regions do not fully overlap.
12. The device of claim 11 , further comprising:
a p-type metallic contact adjacent to at least a portion of the p-type contact layer; and
a n-type metallic contact adjacent to at least a portion of the n-type contact layer.
13. The device of claim 12 , wherein the p-type metallic contact comprises a multilayered structure including:
an ohmic layer immediately adjacent to the at least a portion of the p-type contact layer, the ohmic layer being transparent to the radiation; and
a reflective layer located adjacent to the ohmic layer.
14. The device of claim 12 , wherein at least one of the set of first inhomogeneous regions is partially located in both the contact layer and the metal contact.
15. The device of claim 12 , wherein the n-type contact layer includes the sets of first and second inhomogeneous regions, and wherein the set of second inhomogeneous regions includes at least one horizontally conductive region adjacent to the n-type metal contact.
16. The device of claim 15 , wherein the n-type metal contact includes a set of protrusions into the n-type contact layer.
17. The device of claim 12 , wherein the n-type metal contact comprises a vertical design.
18. A method comprising:
fabricating a semiconductor heterostructure, wherein the semiconductor heterostructure comprises:
a group III nitride semiconductor layer including a plurality of inhomogeneous regions, each inhomogeneous region having a set of attributes differing from a group III nitride material forming the semiconductor layer, wherein the plurality of inhomogeneous regions include:
a set of first inhomogeneous regions configured based on radiation having a target wavelength, wherein the set of first inhomogeneous regions are at least one of: transparent to the radiation or reflective of the radiation; and
a set of second inhomogeneous regions having a conductivity at least ten percent higher than a conductivity of the set of first inhomogeneous regions, wherein each of the sets of inhomogeneous regions occupy at least five percent of at least one of: a lateral planar area of the semiconductor layer or a volume of the semiconductor layer, and wherein at least some of the sets of inhomogeneous regions do not fully overlap.
19. The method of claim 18 , further comprising forming a metal contact immediately adjacent to the group III nitride semiconductor layer.
20. The method of claim 18 , wherein the fabricating includes:
epitaxially growing a portion of the group III nitride semiconductor layer;
forming at least one of the sets of inhomogeneous regions on a surface of the portion of the group III nitride semiconductor layer; and
epitaxially over-growing the group III nitride semiconductor layer after the forming.
21. The method of claim 20 , wherein the forming includes:
depositing the at least one of the sets of inhomogeneous regions using one of: thermal evaporation, magnetron sputtering, ion-beam deposition, or laser beam evaporation; and
patterning the at least one of the sets of inhomogeneous regions using photolithography.