Optical interconnection device and method of manufacturing the same

1. An optical interconnection device, comprising:

a ring-shaped light-emitting element and a disk-shaped light-receiving element, both with the ring-shaped light-emitting element and the disk-shaped light-receiving element having at least a portion with a same layered structure and being formed on a silicon substrate, at least a portion of the ring-shaped light-emitting element being embedded in an insulator, at least a portion of the disk-shaped light-receiving element being embedded in the insulator; and

an optical waveguide being formed over the insulator, the optical waveguide being optically coupled to the ring-shaped light-emitting element and the disk-shaped light-receiving element by distributed coupling,

wherein at least a part of the optical waveguide which is optically coupled to the disc-shaped light-receiving element consists of amorphous silicon and is in a spiral,

the ring-shaped light-emitting element includes an active layer,

the disc-shaped light-receiving element includes a light-absorbing layer, and

the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element are in the portion with the same layered structure and at a same height above the silicon substrate.

2. The device according to claim 1 , wherein a layer is formed between the silicon substrate and both the ring-shaped light-emitting and the disk-shaped light-receiving elements, the layer including at least one selected from the group consisting of metal, amorphous silicon, and polycrystalline silicon.

3. The device according to claim 2 , wherein the ring-shaped light-emitting and disk-shaped light-receiving elements include compound semiconductors.

4. The device according to claim 1 , wherein an electronic circuit for driving the ring-shaped light-emitting and the disk-shaped light-receiving elements is formed in the silicon substrate.

5. The device according to claim 1 , wherein at least a portion of the waveguide coupled to the ring-shaped light-emitting and the disk-shaped light-receiving elements is coupled to a waveguide including a dielectric or organic material.

6. The device according to claim 1 , wherein the optical waveguide consists of amorphous silicon.

7. The device according to claim 1 , wherein the optical waveguide is formed over the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element.

8. An optical interconnection device, comprising:

an electric circuit and metal interconnections, both being formed in a silicon substrate, a portion of the metal interconnections being in contact with the silicon substrate without being electrically connected to the electric circuit;

a ring-shaped light-emitting element and a disk-shaped light-receiving element, both having a layered structure and being formed over the metal interconnections, at least a portion of the ring-shaped light-emitting element being embedded in an insulator, at least a portion of the disk-shaped light-receiving element being embedded in the insulator; and

an optical waveguide being formed over the insulator, the optical waveguide being optically coupled to the ring-shaped light-emitting element and the disk-shaped light-receiving element by distributed coupling,

wherein at least a part of the optical waveguide which is optically coupled to the disc-shaped light-receiving element consists of amorphous silicon and is in a spiral,

the ring-shaped light-emitting element includes an active layer,

the disc-shaped light-receiving element includes a light-absorbing layer, and

the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element are at a same height above the silicon substrate.

9. The device according to claim 8 , wherein the optical waveguide consists of amorphous silicon.

10. The device according to claim 8 , wherein the optical waveguide is formed over the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element.

11. A method of manufacturing an optical interconnection device, the method comprising:

bonding an epitaxially grown layer formed on a semiconductor substrate to a silicon substrate, the epitaxially grown layer being included in a ring-shaped light-emitting element and a disk-shaped light-receiving element;

removing the semiconductor substrate;

forming the ring-shaped light-emitting element and the disk-shaped light-receiving element;

forming a first insulator layer over both the ring-shaped light-emitting element and the disk-shaped light-receiving element;

planarizing the first insulator layer by polishing;

forming an optical waveguide on the polished first insulator;

covering the optical waveguide with a second insulator layer; and

providing electrical interconnections to the ring-shaped light-emitting element and the disk-shaped light-receiving element,

wherein at least a part of the optical waveguide which is optically coupled to the disc-shaped light-receiving element consists of amorphous silicon and is in a spiral,

the ring-shaped light-emitting element includes an active layer,

the disc-shaped light-receiving element includes a light-absorbing layer, and

the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element are at a same height above the silicon substrate.

12. The method according to claim 11 , further comprising:

depositing amorphous silicon or polycrystalline silicon over the epitaxially grown layer;

planarizing the amorphous silicon or the polycrystalline silicon by polishing; and

bonding a planarized surface of the amorphous silicon or the polycrystalline silicon to the silicon substrate.

13. The method according to claim 11 , further comprising:

forming an epitaxially grown layer;

forming a metal layer over the silicon substrate; and

bonding the epitaxially grown layer to the metal layer.

14. The method according to claim 11 , further comprising:

forming amorphous silicon or polycrystalline silicon over the epitaxially grown layer;

planarizing the amorphous silicon or the polycrystalline silicon by polishing;

forming a first metal film on a planarized surface of the amorphous silicon or the polycrystalline silicon;

forming a second metal film on the silicon substrate; and

bonding the planarized surface to the silicon substrate.

15. The method according to claim 11 , wherein the optical waveguide consists of amorphous silicon.

16. The device according to claim 11 , wherein the optical waveguide is formed over the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element.

17. A method of manufacturing an optical interconnection device,

the device including:

an electric circuit and metal interconnections, both being formed in a silicon substrate, a portion of the interconnections being in contact with the silicon substrate without being electrically connected to the electric circuit;

a ring-shaped light-emitting element and a light-receiving element, both having a layered structure including an epitaxially grown layer and being formed over the metal interconnections, at least a portion of the ring-shaped light-emitting element being embedded in an insulator, at least a portion of the ring-shaped light-receiving element being embedded in the insulator; and

an optical waveguide being formed over the insulator, the optical waveguide being optically coupled to the ring-shaped light-emitting element and the ring-shaped light-receiving element by distributed coupling,

the method comprising:

forming the electric circuit in the silicon substrate;

providing a metal leading from an upper surface of a layer including the electric circuit to the silicon substrate;

forming a first metal film over the silicon substrate;

forming a second metal film over the epitaxially grown layer; and

bonding the first metal film to the second metal film,

wherein at least a part of the optical waveguide which is optically coupled to the disc-shaped light-receiving element consists of amorphous silicon and is in a spiral,

the ring-shaped light-emitting element includes an active layer,

the disc-shaped light-receiving element includes a light-absorbing layer, and

the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element are at a same height above the silicon substrate.

18. The method according to claim 17 , wherein the optical waveguide consists of amorphous silicon.

19. The device according to claim 17 , wherein the optical waveguide is formed over the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element.

20. A method of manufacturing an optical interconnection device, the method comprising: bonding an epitaxially grown layer to a silicon substrate, the epitaxially grown layer being to form a ring-shaped light-emitting element or a light-receiving element, an optical waveguide being formed over a semiconductor substrate;

removing the semiconductor substrate; and

forming the ring-shaped light-emitting element or the ring-shaped light-receiving element,

wherein at least a part of the optical waveguide which is optically coupled to the disc-shaped light-receiving element consists of amorphous silicon and is in a spiral,

the ring-shaped light-emitting element includes an active layer,

the disc-shaped light-receiving element includes a light-absorbing layer, and

the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element are at a same height above the silicon substrate.

21. The method according to claim 20 , further comprising:

depositing a dielectric film over a first substrate, the first substrate including a compound semiconductors with the epitaxially grown layer formed on the first substrate;

planarizing the first substrate by polishing;

depositing a dielectric film or forming an oxide film over a second substrate, the second substrate including a silicon substrate with a waveguide pattern formed on the second substrate;

planarizing the second substrate by polishing; and

bonding planarized surfaces of the first and second substrates to each other.

22. The method according to claim 20 , wherein the optical waveguide consists of amorphous silicon.

23. The device according to claim 20 , wherein the optical waveguide is formed over the active layer of the ring-shaped light-emitting element and the light-absorbing layer of the disc-shaped light-receiving element.