Semiconductor device and method for fabricating the same
Provided is a semiconductor device including a substrate and a stack layer. The substrate includes a first region, a second region, and a third region. The third region is disposed between the first region and the second region. Since a top surface of the substrate in the first region is lower than the top surface of the substrate in the second region, the substrate in the third region has a first step height. The stack layer is disposed on the substrate in the first and third regions. The top surface of the stack layer in the first region and the third region and the top surface of the substrate in the second region are substantially coplanar.
1. A semiconductor device, comprising:
a substrate, comprising a first region, a second region, and a third region, wherein the third region is disposed between the first region and the second region, a top surface of the substrate in the first region is lower than the top surface of the substrate in the second region, and the substrate in the third region has a first step height; and
a stack layer, disposed on the substrate in the first region and the third region, wherein a top surface of the stack layer in the first region and the third region and the top surface of the substrate in the second region are substantially coplanar, the stack layer covers an entire top surface and an entire sidewall of the substrate of the third region, and the entire sidewall of the substrate of the third region is in direct contact with the stack layer.
2. The semiconductor device as claimed in claim 1 , wherein the top surface of the stack layer in the third region is substantially equal to or lower than the top surface of the substrate in the second region.
3. The semiconductor device as claimed in claim 1 , wherein the stack layer comprises a plurality of dielectric layers and a plurality of conductive layers, and the dielectric layers and the conductive layers are stacked alternately.
4. The semiconductor device as claimed in claim 3 , further comprising:
a plurality of conductive pillars, disposed in the stack layer in the first region; and
a plurality of charge storage layers, disposed between the conductive pillars and the stack layer.
5. The semiconductor device as claimed in claim 1 , wherein the first region is a memory cell array region, and the second region is a peripheral circuit region.
6. The semiconductor device as claimed in claim 1 , wherein a width of the third region is from 40 nm to 140 nm.
7. A semiconductor device, comprising:
a substrate, comprising a first region, a second region, and a third region, wherein the third region is disposed between the first region and the second region, a top surface of the substrate in the first region is lower than the top surface of the substrate in the second region, and the substrate in the third region has a first step height;
a stack layer, disposed on the substrate in the first region and the third region, wherein a top surface of the stack layer in the first region and the third region and the top surface of the substrate in the second region are substantially coplanar;
a plurality of conductive pillars, disposed in the stack layer in the first region; and
a plurality of charge storage layers, disposed between the conductive pillars and the stack layer, wherein the charge storage layers do not contact with the substrate.
8. The semiconductor device as claimed in claim 7 , wherein the top surface of the stack layer in the third region is substantially equal to or lower than the top surface of the substrate in the second region.
9. The semiconductor device as claimed in claim 7 , wherein the stack layer comprises a plurality of dielectric layers and a plurality of conductive layers, and the dielectric layers and the conductive layers are stacked alternately.
10. The semiconductor device as claimed in claim 7 , wherein the first region is a memory cell array region, and the second region is a peripheral circuit region.
11. The semiconductor device as claimed in claim 7 , wherein a width of the third region is from 40 nm to 140 nm.